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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
CSD19506KTT

CSD19506KTT

MOSFET N-CH 80V 200A DDPAK

Texas Instruments

490 5.59
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CSD19506KTT

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Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 80 V 200A (Ta) 6V, 10V 2.3mOhm @ 100A, 10V 3.2V @ 250µA 156 nC @ 10 V ±20V 12200 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLB3034PBF

IRLB3034PBF

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies

1353 4.34
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IRLB3034PBF

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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.7mOhm @ 195A, 10V 2.5V @ 250µA 162 nC @ 4.5 V ±20V 10315 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF3205

AUIRF3205

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies

560 4.36
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AUIRF3205

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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
STW10NK60Z

STW10NK60Z

MOSFET N-CH 600V 10A TO247-3

STMicroelectronics

530 4.40
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STW10NK60Z

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Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 4.5A, 10V 4.5V @ 250µA 70 nC @ 10 V ±30V 1370 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP054PBF

IRFP054PBF

MOSFET N-CH 60V 70A TO247-3

Vishay Siliconix

3479 4.80
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IRFP054PBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 10V 14mOhm @ 54A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 4500 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN5R0-100PS,127

PSMN5R0-100PS,127

MOSFET N-CH 100V 120A TO220AB

Nexperia USA Inc.

555 4.86
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PSMN5R0-100PS,127

Datenblatt

Bulk,Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 5mOhm @ 25A, 10V 4V @ 1mA 170 nC @ 10 V ±20V 9900 pF @ 50 V - 338W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB3006PBF

IRFB3006PBF

MOSFET N-CH 60V 195A TO220AB

Infineon Technologies

2047 4.92
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IRFB3006PBF

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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP460PBF

IRFP460PBF

MOSFET N-CH 500V 20A TO247-3

Vishay Siliconix

1346 4.94
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IRFP460PBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 12A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 4200 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP65H300G4LSG

TP65H300G4LSG

GANFET N-CH 650V 6.5A 3PQFN

Transphorm

2438 4.02
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TP65H300G4LSG

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Tube - Active N-Channel GaNFET (Gallium Nitride) 650 V 6.5A (Tc) 8V 312mOhm @ 5A, 8V 2.6V @ 500µA 9.6 nC @ 8 V ±18V 760 pF @ 400 V - 21W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY15P15T

IXTY15P15T

MOSFET P-CH 150V 15A TO252

IXYS

662 4.06
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IXTY15P15T

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Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 150 V 15A (Tc) 10V 240mOhm @ 7A, 10V 4.5V @ 250µA 48 nC @ 10 V ±15V 3650 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFB4228PBF

IRFB4228PBF

MOSFET N-CH 150V 83A TO220AB

Infineon Technologies

745 5.08
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IRFB4228PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 83A (Tc) 10V 15mOhm @ 33A, 10V 5V @ 250µA 107 nC @ 10 V ±30V 4530 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
FDP025N06

FDP025N06

MOSFET N-CH 60V 120A TO220-3

onsemi

1354 5.11
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FDP025N06

Datenblatt

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.5mOhm @ 75A, 10V 4.5V @ 250µA 226 nC @ 10 V ±20V 14885 pF @ 25 V - 395W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCP22N60N

FCP22N60N

MOSFET N-CH 600V 22A TO220-3

onsemi

651 5.14
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FCP22N60N

Datenblatt

Tube SupreMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 165mOhm @ 11A, 10V 4V @ 250µA 45 nC @ 10 V ±45V 1950 pF @ 100 V - 205W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP460APBF

IRFP460APBF

MOSFET N-CH 500V 20A TO247-3

Vishay Siliconix

1796 5.22
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IRFP460APBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 12A, 10V 4V @ 250µA 105 nC @ 10 V ±30V 3100 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD18536KCS

CSD18536KCS

MOSFET N-CH 60V 200A TO220-3

Texas Instruments

777 5.22
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CSD18536KCS

Datenblatt

Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 200A (Ta) 4.5V, 10V 1.6mOhm @ 100A, 10V 2.2V @ 250µA 108 nC @ 10 V ±20V 11430 pF @ 30 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB18N50KPBF

IRFB18N50KPBF

MOSFET N-CH 500V 17A TO220AB

Vishay Siliconix

2987 5.29
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IRFB18N50KPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 290mOhm @ 10A, 10V 5V @ 250µA 120 nC @ 10 V ±30V 2830 pF @ 25 V - 220W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB3004PBF

IRFB3004PBF

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies

1807 5.36
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IRFB3004PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.75mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP020N06B-F102

FDP020N06B-F102

MOSFET N-CH 60V 120A TO220-3

onsemi

2150 5.39
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FDP020N06B-F102

Datenblatt

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2mOhm @ 100A, 10V 4.5V @ 250µA 268 nC @ 10 V ±20V 20930 pF @ 30 V - 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB20N50KPBF

IRFB20N50KPBF

MOSFET N-CH 500V 20A TO220AB

Vishay Siliconix

2409 5.48
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IRFB20N50KPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 250mOhm @ 12A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 2870 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW15NK50Z

STW15NK50Z

MOSFET N-CH 500V 14A TO247-3

STMicroelectronics

450 5.56
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STW15NK50Z

Datenblatt

Tube SuperMESH™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 340mOhm @ 7A, 10V 4.5V @ 100µA 106 nC @ 10 V ±30V 2260 pF @ 25 V - 160W (Tc) -50°C ~ 150°C (TJ) Through Hole
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