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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFB260NPBF

IRFB260NPBF

MOSFET N-CH 200V 56A TO220AB

Infineon Technologies

934 3.20
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IRFB260NPBF

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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 56A (Tc) 10V 40mOhm @ 34A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 4220 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDPF18N50T

FDPF18N50T

MOSFET N-CH 500V 18A TO220F

onsemi

683 3.20
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FDPF18N50T

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Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Tc) 10V 265mOhm @ 9A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2860 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF33N25T

FDPF33N25T

MOSFET N-CH 250V 33A TO220F

onsemi

8179 2.60
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FDPF33N25T

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Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 250 V 33A (Tc) 10V 94mOhm @ 16.5A, 10V 5V @ 250µA 48 nC @ 10 V ±30V 2135 pF @ 25 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R180P7XKSA1

IPP60R180P7XKSA1

MOSFET N-CH 650V 18A TO220-3

Infineon Technologies

2000 3.24
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IPP60R180P7XKSA1

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Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP064NPBF

IRFP064NPBF

MOSFET N-CH 55V 110A TO247AC

Infineon Technologies

7733 3.25
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IRFP064NPBF

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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 59A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80P03P4L04AKSA1

IPP80P03P4L04AKSA1

MOSFET P-CH 30V 80A TO220-3

Infineon Technologies

457 3.30
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IPP80P03P4L04AKSA1

Datenblatt

Tube OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 4.4mOhm @ 80A, 10V 2V @ 253µA 160 nC @ 10 V +5V, -16V 11300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1004PBF

IRL1004PBF

MOSFET N-CH 40V 130A TO220AB

Infineon Technologies

2206 3.31
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IRL1004PBF

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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 130A (Tc) 4.5V, 10V 6.5mOhm @ 78A, 10V 1V @ 250µA 100 nC @ 4.5 V ±16V 5330 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
STW9NK95Z

STW9NK95Z

MOSFET N-CH 950V 7A TO247

STMicroelectronics

349 3.32
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STW9NK95Z

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Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 950 V 7A (Tc) 10V 1.38Ohm @ 3.6A, 10V 4.5V @ 100µA 56 nC @ 10 V ±30V 2256 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP9240PBF

IRFP9240PBF

MOSFET P-CH 200V 12A TO247-3

Vishay Siliconix

972 3.39
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IRFP9240PBF

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Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 12A (Tc) 10V 500mOhm @ 7.2A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
PHP191NQ06LT,127

PHP191NQ06LT,127

MOSFET N-CH 55V 75A TO220AB

Nexperia USA Inc.

4218 3.42
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PHP191NQ06LT,127

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Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 3.7mOhm @ 25A, 10V 2V @ 1mA 95.6 nC @ 5 V ±15V 7665 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4410PBF

IRFB4410PBF

MOSFET N-CH 100V 88A TO220AB

Infineon Technologies

7510 3.44
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IRFB4410PBF

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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 88A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP140N8F7

STP140N8F7

MOSFET N-CH 80V 90A TO220

STMicroelectronics

249 3.44
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STP140N8F7

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Tube DeepGATE™, STripFET™ VII Active N-Channel MOSFET (Metal Oxide) 80 V 90A (Tc) 10V 4.3mOhm @ 45A, 10V 4.5V @ 250µA 96 nC @ 10 V ±20V 6340 pF @ 40 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK065U65Z,RQ

TK065U65Z,RQ

DTMOS VI TOLL PD=270W F=1MHZ

Toshiba Semiconductor and Storage

5393 6.70
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TK065U65Z,RQ

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Tape & Reel (TR),Cut Tape (CT) DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Ta) 10V 65mOhm @ 19A, 10V 4V @ 1.69mA 62 nC @ 10 V ±30V 3650 pF @ 300 V - 270W (Tc) 150°C Surface Mount
IRFB5620PBF

IRFB5620PBF

MOSFET N-CH 200V 25A TO220AB

Infineon Technologies

2383 3.51
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IRFB5620PBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 25A (Tc) 10V 72.5mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP047N08

FDP047N08

MOSFET N-CH 75V 164A TO220-3

onsemi

2975 3.56
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FDP047N08

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Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 75 V 164A (Tc) 10V 4.7mOhm @ 80A, 10V 4.5V @ 250µA 152 nC @ 10 V ±20V 9415 pF @ 25 V - 268W (Tc) -55°C ~ 175°C (TJ) Through Hole
CSD19505KCS

CSD19505KCS

MOSFET N-CH 80V 150A TO220-3

Texas Instruments

3143 3.61
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CSD19505KCS

Datenblatt

Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 80 V 150A (Ta) 6V, 10V 3.8mOhm @ 100A, 6V 3.2V @ 250µA 76 nC @ 10 V ±20V 7820 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI4227PBF

IRFI4227PBF

MOSFET N-CH 200V 26A TO220AB FP

Infineon Technologies

12445 3.63
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IRFI4227PBF

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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 26A (Tc) 10V 25mOhm @ 17A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4600 pF @ 25 V - 46W (Tc) -40°C ~ 150°C (TJ) Through Hole
IXTP28P065T

IXTP28P065T

MOSFET P-CH 65V 28A TO220AB

IXYS

2055 3.65
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IXTP28P065T

Datenblatt

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 65 V 28A (Tc) 10V 45mOhm @ 14A, 10V 4.5V @ 250µA 46 nC @ 10 V ±15V 2030 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF2907ZPBF

IRF2907ZPBF

MOSFET N-CH 75V 160A TO220AB

Infineon Technologies

900 3.67
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IRF2907ZPBF

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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 160A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2804PBF

IRF2804PBF

MOSFET N-CH 40V 75A TO220AB

Infineon Technologies

11442 3.69
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IRF2804PBF

Datenblatt

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 2.3mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
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