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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFDC20PBF

IRFDC20PBF

MOSFET N-CH 600V 320MA 4DIP

Vishay Siliconix

1394 2.37
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IRFDC20PBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 320mA (Ta) 10V 4.4Ohm @ 190mA, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
BSC036NE7NS3GATMA1

BSC036NE7NS3GATMA1

MOSFET N-CH 75V 100A TDSON

Infineon Technologies

8209 4.34
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BSC036NE7NS3GATMA1

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Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 3.6mOhm @ 50A, 10V 3.8V @ 110µA 63.4 nC @ 10 V ±20V 4400 pF @ 37.5 V - 2.5W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP150MPBF

IRFP150MPBF

MOSFET N-CH 100V 42A TO247AC

Infineon Technologies

1262 2.42
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IRFP150MPBF

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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 36mOhm @ 23A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP50N06

RFP50N06

MOSFET N-CH 60V 50A TO220-3

onsemi

1348 2.43
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RFP50N06

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Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 22mOhm @ 50A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 2020 pF @ 25 V - 131W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP12CN10LGXKSA1

IPP12CN10LGXKSA1

MOSFET N-CH 100V 69A TO220-3

Infineon Technologies

1260 2.45
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IPP12CN10LGXKSA1

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Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 69A (Tc) 4.5V, 10V 12mOhm @ 69A, 10V 2.4V @ 83µA 58 nC @ 10 V ±20V 5600 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
CSD18510KTTT

CSD18510KTTT

MOSFET N-CH 40V 274A DDPAK

Texas Instruments

1148 2.93
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CSD18510KTTT

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Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 274A (Tc) 4.5V, 10V 2.6mOhm @ 100A, 10V 2.3V @ 250µA 132 nC @ 10 V ±20V 11400 pF @ 15 V - 250W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IRF9640SPBF

IRF9640SPBF

MOSFET P-CH 200V 11A D2PAK

Vishay Siliconix

1880 2.51
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IRF9640SPBF

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Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 3W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40PBF

IRFBC40PBF

MOSFET N-CH 600V 6.2A TO220AB

Vishay Siliconix

2589 2.52
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IRFBC40PBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP12P20

FQP12P20

MOSFET P-CH 200V 11.5A TO220-3

onsemi

3117 2.55
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FQP12P20

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Tube QFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 200 V 11.5A (Tc) 10V 470mOhm @ 5.75A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1200 pF @ 25 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN015-100P,127

PSMN015-100P,127

MOSFET N-CH 100V 75A TO220AB

Nexperia USA Inc.

8758 2.57
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PSMN015-100P,127

Datenblatt

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 15mOhm @ 25A, 10V 4V @ 1mA 90 nC @ 10 V ±20V 4900 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP52N20

FDP52N20

MOSFET N-CH 200V 52A TO220-3

onsemi

7058 2.59
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FDP52N20

Datenblatt

Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 52A (Tc) 10V 49mOhm @ 26A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2900 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF16N50

FDPF16N50

MOSFET N-CH 500V 16A TO220F

onsemi

2415 2.59
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FDPF16N50

Datenblatt

Tube UniFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 380mOhm @ 8A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1945 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOB27S60L

AOB27S60L

MOSFET N-CH 600V 27A TO263

Alpha & Omega Semiconductor Inc.

17969 4.20
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AOB27S60L

Datenblatt

Tape & Reel (TR),Cut Tape (CT) aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) 10V 160mOhm @ 13.5A, 10V 4V @ 250µA 26 nC @ 10 V ±30V 1294 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL540PBF

IRL540PBF

MOSFET N-CH 100V 28A TO220AB

Vishay Siliconix

1885 2.63
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IRL540PBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 4V, 5V 77mOhm @ 17A, 5V 2V @ 250µA 64 nC @ 5 V ±10V 2200 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB11N50APBF

IRFB11N50APBF

MOSFET N-CH 500V 11A TO220AB

Vishay Siliconix

1362 2.63
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IRFB11N50APBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF11S65L

AOTF11S65L

MOSFET N-CH 650V 11A TO220-3F

Alpha & Omega Semiconductor Inc.

4973 2.65
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AOTF11S65L

Datenblatt

Tube aMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 399mOhm @ 5.5A, 10V 4V @ 250µA 13.2 nC @ 10 V ±30V 646 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP9140NPBF

IRFP9140NPBF

MOSFET P-CH 100V 23A TO247AC

Infineon Technologies

3776 2.66
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IRFP9140NPBF

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Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 13A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 1300 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
VP2206N3-G

VP2206N3-G

MOSFET P-CH 60V 640MA TO92-3

Microchip Technology

422 2.67
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VP2206N3-G

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Bag - Active P-Channel MOSFET (Metal Oxide) 60 V 640mA (Tj) 5V, 10V 900mOhm @ 3.5A, 10V 3.5V @ 10mA - ±20V 450 pF @ 25 V - 740mW (Tc) -55°C ~ 150°C (TJ) Through Hole
RCJ510N25TL

RCJ510N25TL

MOSFET N-CH 250V 51A LPTS

Rohm Semiconductor

5608 5.01
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RCJ510N25TL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 51A (Tc) 10V 65mOhm @ 25.5A, 10V 5V @ 1mA 120 nC @ 10 V ±30V 7000 pF @ 25 V - 1.56W (Ta), 40W (Tc) 150°C (TJ) Surface Mount
TK099V65Z,LQ

TK099V65Z,LQ

MOSFET N-CH 650V 30A 5DFN

Toshiba Semiconductor and Storage

3750 5.25
- +

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TK099V65Z,LQ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 99mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 230W (Tc) 150°C Surface Mount
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