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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTP067N65S3H

NTP067N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

2141 7.14
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NTP067N65S3H

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Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 40A (Tc) 10V 67mOhm @ 20A, 10V 4V @ 3.9mA 80 nC @ 10 V ±30V 3750 pF @ 400 V - 266W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH270N06T3

IXFH270N06T3

MOSFET N-CH 60V 270A TO247

IXYS

156 7.29
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IXFH270N06T3

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Tube HiperFET™, TrenchT3™ Active N-Channel MOSFET (Metal Oxide) 60 V 270A (Tc) 10V 3.1mOhm @ 100A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 12600 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTHL041N60S5H

NTHL041N60S5H

NTHL041N60S5H

onsemi

300 7.39
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NTHL041N60S5H

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Tube SuperFET® V Active N-Channel MOSFET (Metal Oxide) 600 V 57A (Tc) 10V 41mOhm @ 28.5A, 10V 4.3V @ 6.7mA 108 nC @ 10 V ±30V 5840 pF @ 400 V - 329W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM60NB190CF C0G

TSM60NB190CF C0G

MOSFET N-CH 600V 18A ITO220S

Taiwan Semiconductor Corporation

3714 7.56
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TSM60NB190CF C0G

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 190mOhm @ 3.7A, 10V 4V @ 250µA 32 nC @ 10 V ±30V 1311 pF @ 100 V - 59.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP20N60S5XKSA1

SPP20N60S5XKSA1

HIGH POWER_LEGACY

Infineon Technologies

1496 7.57
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SPP20N60S5XKSA1

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Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 13A, 10V 5.5V @ 1mA 103 nC @ 10 V ±20V 3000 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
G3R450MT17D

G3R450MT17D

SIC MOSFET N-CH 9A TO247-3

GeneSiC Semiconductor

1256 7.64
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G3R450MT17D

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Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 9A (Tc) 15V 585mOhm @ 4A, 15V 2.7V @ 2mA 18 nC @ 15 V ±15V 454 pF @ 1000 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
STW36N60M6

STW36N60M6

MOSFET N-CHANNEL 600V 30A TO247

STMicroelectronics

1696 7.68
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STW36N60M6

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Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 99mOhm @ 15A, 10V 4.75V @ 250µA 44.3 nC @ 10 V ±25V 1960 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0120090J-TR

C3M0120090J-TR

SICFET N-CH 900V 22A D2PAK-7

Wolfspeed, Inc.

2339 11.80
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C3M0120090J-TR

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Tape & Reel (TR),Cut Tape (CT) C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 22A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 17.3 nC @ 15 V +18V, -8V 350 pF @ 600 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UF3C120400K3S

UF3C120400K3S

SICFET N-CH 1200V 7.6A TO247-3

UnitedSiC

730 7.78
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UF3C120400K3S

Datenblatt

Tube - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 7.6A (Tc) 12V 515mOhm @ 5A, 12V 6V @ 10mA 27 nC @ 15 V ±25V 740 pF @ 100 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP030N10N3GXKSA1

IPP030N10N3GXKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies

2911 7.85
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IPP030N10N3GXKSA1

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Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 3mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C065080T3S

UF3C065080T3S

MOSFET N-CH 650V 31A TO220-3

UnitedSiC

4957 7.92
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UF3C065080T3S

Datenblatt

Tube - Active N-Channel - 650 V 31A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
UJ3C065080T3S

UJ3C065080T3S

MOSFET N-CH 650V 31A TO220-3

UnitedSiC

738 7.92
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UJ3C065080T3S

Datenblatt

Tube - Active N-Channel - 650 V 31A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH26N50P

IXFH26N50P

MOSFET N-CH 500V 26A TO247AD

IXYS

2068 7.98
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IXFH26N50P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5.5V @ 4mA 60 nC @ 10 V ±30V 3600 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH070N60E

FCH070N60E

MOSFET N-CH 600V 52A TO247

onsemi

269 8.05
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FCH070N60E

Datenblatt

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) 10V 70mOhm @ 26A, 10V 3.5V @ 250µA 166 nC @ 10 V ±20V 4925 pF @ 380 V - 481W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R095C7XKSA1

IPW65R095C7XKSA1

MOSFET N-CH 650V 24A TO247

Infineon Technologies

1420 8.24
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IPW65R095C7XKSA1

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 95mOhm @ 11.8A, 10V 4V @ 590µA 45 nC @ 10 V ±20V 2140 pF @ 400 V - 128W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDH44N50

FDH44N50

MOSFET N-CH 500V 44A TO247-3

onsemi

717 8.32
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FDH44N50

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) 10V 120mOhm @ 22A, 10V 4V @ 250µA 108 nC @ 10 V ±30V 5335 pF @ 25 V - 750W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP72N20X3

IXFP72N20X3

MOSFET N-CH 200V 72A TO220

IXYS

106 8.49
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IXFP72N20X3

Datenblatt

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 72A (Tc) 10V 20mOhm @ 36A, 10V 4.5V @ 1.5mA 55 nC @ 10 V ±20V 3780 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF3C065080K3S

UF3C065080K3S

MOSFET N-CH 650V 31A TO247-3

UnitedSiC

536 8.51
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UF3C065080K3S

Datenblatt

Tube - Active N-Channel - 650 V 31A (Tc) 12V 100mOhm @ 20A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA075N15N3GXKSA1

IPA075N15N3GXKSA1

MOSFET N-CH 150V 43A TO220-3

Infineon Technologies

2733 8.52
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IPA075N15N3GXKSA1

Datenblatt

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 8V, 10V 7.5mOhm @ 43A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 7280 pF @ 75 V - 39W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTHL065N65S3HF

NTHL065N65S3HF

MOSFET N-CH 650V 46A TO247-3

onsemi

328 8.93
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NTHL065N65S3HF

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Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) - 65mOhm @ 23A, 10V 5V @ 1.3mA 98 nC @ 10 V ±30V 4075 pF @ 400 V - 337W (Tc) -55°C ~ 150°C (TJ) Through Hole
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