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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SE10DGHM3/I

SE10DGHM3/I

DIODE GEN PURP 400V 3A TO263AC

Vishay General Semiconductor - Diodes Division

3185 0.93
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SE10DGHM3/I

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 67pF @ 4V, 1MHz 3 µs 15 µA @ 400 V 400 V 3A -55°C ~ 175°C 1.15 V @ 10 A
1N5419US

1N5419US

DIODE GEN PURP 500V 3A D5B

Microchip Technology

3536 8.58
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1N5419US

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 250 ns 1 µA @ 500 V 500 V 3A -65°C ~ 175°C 1.5 V @ 9 A
SE10DJHM3/I

SE10DJHM3/I

DIODE GEN PURP 600V 3A TO263AC

Vishay General Semiconductor - Diodes Division

2510 0.93
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SE10DJHM3/I

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 67pF @ 4V, 1MHz 3 µs 15 µA @ 600 V 600 V 3A -55°C ~ 175°C 1.15 V @ 10 A
1N5802US/TR

1N5802US/TR

RECTIFIER UFR,FRR

Microchip Technology

2343 8.58
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1N5802US/TR

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 10V, 1MHz 25 ns 1 µA @ 50 V 50 V 1A -65°C ~ 175°C 875 mV @ 1 A
SE10DBHM3/I

SE10DBHM3/I

DIODE GEN PURP 100V 3A TO263AC

Vishay General Semiconductor - Diodes Division

3106 0.40
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SE10DBHM3/I

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 67pF @ 4V, 1MHz 3000 ns 15 µA @ 100 V 100 V 3A (DC) -55°C ~ 175°C 1.15 V @ 10 A
1N5418US/TR

1N5418US/TR

RECTIFIER UFR,FRR

Microchip Technology

2503 8.58
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 150 ns 1 µA @ 400 V 400 V 3A -65°C ~ 175°C 1.5 V @ 9 A
DR754-TP

DR754-TP

DIODE GEN PURP 400V 6A R-6

Micro Commercial Co

3197 0.40
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DR754-TP

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz - 10 µA @ 400 V 400 V 6A -50°C ~ 150°C 1.1 V @ 6 A
1N5417US/TR

1N5417US/TR

RECTIFIER UFR,FRR

Microchip Technology

2475 8.58
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 150 ns 1 µA @ 200 V 200 V 3A -65°C ~ 175°C 1.5 V @ 9 A
TSPB5H150S S2G

TSPB5H150S S2G

DIODE SCHOTTKY 150V 5A SMPC4.0

Taiwan Semiconductor Corporation

2786 0.40
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TSPB5H150S S2G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 150 V 150 V 5A -55°C ~ 150°C 840 mV @ 5 A
1N5418USE3

1N5418USE3

UFR,FRR

Microchip Technology

2504 8.58
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1N5418USE3

Datenblatt

Bulk RoHS - - Active - - - - - - - -
S10CK-M3/I

S10CK-M3/I

DIODE GEN PURP 800V 10A DO214AB

Vishay General Semiconductor - Diodes Division

2161 0.40
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S10CK-M3/I

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 79pF @ 4V, 1MHz 5 µs 10 µA @ 800 V 800 V 10A -55°C ~ 150°C 1 V @ 10 A
JAN1N5551US/TR

JAN1N5551US/TR

RECTIFIER UFR,FRR

Microchip Technology

3294 8.60
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Tape & Reel (TR) Military, MIL-PRF-19500/420 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 2 µs 1 µA @ 400 V 400 V 3A -65°C ~ 175°C 1.2 V @ 9 A
S10CM-M3/I

S10CM-M3/I

DIODE GEN PURP 1KV 10A DO214AB

Vishay General Semiconductor - Diodes Division

3986 0.40
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S10CM-M3/I

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 79pF @ 4V, 1MHz 5 µs 10 µA @ 1000 V 1000 V 10A -55°C ~ 150°C 1 V @ 10 A
JANTX1N5186/TR

JANTX1N5186/TR

RECTIFIER UFR,FRR

Microchip Technology

2049 8.60
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JANTX1N5186/TR

Datenblatt

Tape & Reel (TR) Military, MIL-PRF-19500/424 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 150 ns 2 µA @ 100 V 100 V 3A -65°C ~ 175°C 1.5 V @ 9 A
S8CKHM3/I

S8CKHM3/I

DIODE GEN PURP 800V 8A DO214AB

Vishay General Semiconductor - Diodes Division

2287 0.40
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S8CKHM3/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 79pF @ 4V, 1MHz 4 µs 10 µA @ 800 V 800 V 8A -55°C ~ 150°C 985 mV @ 8 A
JAN1N5623US/TR

JAN1N5623US/TR

RECTIFIER UFR,FRR

Microchip Technology

3289 8.63
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Tape & Reel (TR) Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 12V, 1MHz 500 ns 500 nA @ 1 V 1000 V 1A -65°C ~ 175°C 1.6 V @ 3 A
S8CMHM3/I

S8CMHM3/I

DIODE GEN PURP 1KV 8A DO214AB

Vishay General Semiconductor - Diodes Division

3585 0.40
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S8CMHM3/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 79pF @ 4V, 1MHz 4 µs 10 µA @ 1000 V 1000 V 8A -55°C ~ 150°C 985 mV @ 8 A
FFSH20120A-F155

FFSH20120A-F155

SIC DIODE GEN1.0 TO247-2L LL

onsemi

2055 8.63
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FFSH20120A-F155

Datenblatt

Tray RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1220pF @ 1V, 100kHz 0 ns 200 µA @ 1200 V 1200 V 30A (DC) -55°C ~ 175°C 1.75 V @ 20 A
V12PM10HM3/H

V12PM10HM3/H

DIODE SCHOTTKY 100V 12A TO277A

Vishay General Semiconductor - Diodes Division

3521 0.40
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V12PM10HM3/H

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 100 V 100 V 12A -40°C ~ 150°C 750 mV @ 12 A
VS-71HFR10

VS-71HFR10

DIODE GEN PURP 100V 70A DO203AB

Vishay General Semiconductor - Diodes Division

3438 8.65
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VS-71HFR10

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 15 mA @ 100 V 100 V 70A -65°C ~ 180°C 1.35 V @ 220 A
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