Diodes-Rectifiers-Single - Élément Technology Co., Ltd.

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Le fabricant#	Stocks	Prix	Quantité	Tableau	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
V10P15-M3/I DIODE SCHOTTKY 150V 10A TO277A Vishay General Semiconductor - Diodes Division	3983	0.28	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR)	eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	200 µA @ 150 V	150 V	10A	-40°C ~ 150°C	1.08 V @ 10 A
S12JR DIODE GEN PURP REV 600V 12A DO4 GeneSiC Semiconductor	2643	4.81	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	600 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
CMS15(TE12L,Q,M) DIODE SCHOTTKY 60V 3A M-FLAT Toshiba Semiconductor and Storage	3264	0.28	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	102pF @ 10V, 1MHz	-	300 µA @ 60 V	60 V	3A	-40°C ~ 150°C	580 mV @ 3 A
S12K DIODE GEN PURP 800V 12A DO4 GeneSiC Semiconductor	2390	4.81	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	800 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
VS-4ESH01HM3/87A DIODE GEN PURP 100V 4A TO277A Vishay General Semiconductor - Diodes Division	2158	0.28	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101, FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	25 ns	2 µA @ 4 V	100 V	4A	-65°C ~ 175°C	930 mV @ 4 A
S12KR DIODE GEN PURP REV 800V 12A DO4 GeneSiC Semiconductor	3622	4.81	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	800 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
VS-4ESH02HM3/87A DIODE GEN PURP 200V 4A TO277A Vishay General Semiconductor - Diodes Division	3637	0.28	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101, FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	25 ns	2 µA @ 200 V	200 V	4A	-65°C ~ 175°C	930 mV @ 4 A
S12M DIODE GEN PURP 1000V 12A DO4 GeneSiC Semiconductor	3318	4.81	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	1000 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
NRVBM120ET1G DIODE SCHOTTKY 20V 1A POWERMITE onsemi	65872	0.22	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR),Bulk	POWERMITE®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 nA @ 5 V	20 V	1A	-65°C ~ 150°C	595 mV @ 2 A
S12MR DIODE GEN PURP REV 1KV 12A DO4 GeneSiC Semiconductor	3677	4.81	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	1000 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
EGP20C DIODE GEN PURP 150V 2A DO15 onsemi	2433	0.28	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	50 ns	5 µA @ 150 V	150 V	2A	-65°C ~ 150°C	950 mV @ 2 A
S12Q DIODE GEN PURP 1200V 12A DO4 GeneSiC Semiconductor	3134	4.81	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	1200 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
EG1 DIODE GEN PURP 400V 800MA AXIAL Sanken	2371	0.28	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	100 ns	50 µA @ 400 V	400 V	800mA	-40°C ~ 150°C	1.8 V @ 800 mA
S12QR DIODE GEN PURP REV 1.2KV 12A DO4 GeneSiC Semiconductor	2452	4.81	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	1200 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
EM1A DIODE GEN PURP 600V 1A AXIAL Sanken	3149	0.28	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 600 V	600 V	1A	-40°C ~ 150°C	970 mV @ 1 A
CDLL645 DIODE GEN PURP 225V 400MA DO213 Microchip Technology	2387	4.82	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	50 nA @ 225 V	225 V	400mA	-65°C ~ 175°C	1 V @ 400 mA
EM1Y DIODE GEN PURP 100V 1A AXIAL Sanken	2488	0.28	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 100 V	100 V	1A	-40°C ~ 150°C	970 mV @ 1 A
UF27520070A1.T1 PIV 200V IO 90A TRR 70NS CHIP SI SMC Diode Solutions	3280	4.82	- + Ajouter au panier Demander	Datenblatt	Tray		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Surface Mount	-	70 ns	60 µA @ 200 V	200 V	90A	150°C (Max)	1 V @ 90 A
EM01Z DIODE GEN PURP 200V 1A AXIAL Sanken	2937	0.28	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 200 V	200 V	1A	-40°C ~ 150°C	970 mV @ 1 A
VS-100BGQ015HF4 DIODE SCHOTTKY 15V 100A POWERTAB Vishay General Semiconductor - Diodes Division	2844	4.82	- + Ajouter au panier Demander	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Chassis Mount	3800pF @ 5V, 1MHz	-	18 mA @ 15 V	15 V	100A	-55°C ~ 125°C	520 mV @ 100 A

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