Diodes-Rectifiers-Single - Élément Technology Co., Ltd.

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Le fabricant#	Stocks	Prix	Quantité	Tableau	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
EP01C DIODE GEN PURP 1KV 200MA AXIAL Sanken	3411	0.28	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	-	200 ns	5 µA @ 1000 V	1000 V	200mA	-40°C ~ 150°C	4 V @ 200 mA
VS-100BGQ045HF4 DIODE SCHOTTKY 45V 100A POWERTAB Vishay General Semiconductor - Diodes Division	2520	4.84	- + Ajouter au panier Demander	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Chassis Mount	2700pF @ 5V, 1MHz	-	1 mA @ 45 V	45 V	100A	-55°C ~ 150°C	770 mV @ 100 A
ES1 DIODE GEN PURP 400V 700MA AXIAL Sanken	2370	0.28	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 400 V	400 V	700mA	-40°C ~ 150°C	2.5 V @ 800 mA
CDLL486B DIODE GEN PURP 250V 200MA DO213 Microchip Technology	2287	4.85	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	-	-	100 µA @ 250 V	250 V	200mA	-65°C ~ 175°C	1 V @ 100 mA
EU1Z DIODE GEN PURP 200V 500MA AXIAL Sanken	2326	0.28	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	400 ns	10 µA @ 200 V	200 V	500mA	-40°C ~ 150°C	1 V @ 500 mA
DMA30P1600HR POWER DIODE DISC-RECTIFIER ISOPL IXYS	2771	4.85	- + Ajouter au panier Demander	Datenblatt	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 400V, 1MHz	-	40 µA @ 1600 V	1600 V	30A	-55°C ~ 175°C	1.28 V @ 30 A
EU2 DIODE GEN PURP 400V 1A AXIAL Sanken	2874	0.28	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	400 ns	10 µA @ 400 V	400 V	1A	-40°C ~ 150°C	1.4 V @ 1 A
VS-EBU8006HF4 DIODE GEN PURP 600V 80A POWERTAB Vishay General Semiconductor - Diodes Division	2057	4.86	- + Ajouter au panier Demander	Datenblatt	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis Mount	-	-	8 µA @ 600 V	600 V	80A	-65°C ~ 175°C	1.53 V @ 80 A
EU2A DIODE GEN PURP 600V 1A AXIAL Sanken	3662	0.28	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	400 ns	10 µA @ 600 V	600 V	1A	-40°C ~ 150°C	1.4 V @ 1 A
PCFFS08120AF DIODE SCHOTTKY 8A 1200V DIE onsemi	2141	4.87	- + Ajouter au panier Demander		Tray		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	-	0 ns	200 µA @ 1200 V	1200 V	8A	175°C (Max)	1.723 V @ 20 A
RH 1AV1 DIODE GEN PURP 600V 600MA AXIAL Sanken	3720	0.28	- + Ajouter au panier Demander	Datenblatt	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	4 µs	5 µA @ 600 V	600 V	600mA	-40°C ~ 150°C	1.3 V @ 600 mA
JANTX1N5617 DIODE GEN PURP 400V 1A AXIAL Microchip Technology	2177	4.88	- + Ajouter au panier Demander	Datenblatt	Bulk	Military, MIL-PRF-19500/429	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	35pF @ 12V, 1MHz	150 ns	500 nA @ 400 V	400 V	1A	-65°C ~ 175°C	1.6 V @ 3 A
RH 1BV1 DIODE GEN PURP 800V 600MA AXIAL Sanken	3722	0.28	- + Ajouter au panier Demander	Datenblatt	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	4 µs	5 µA @ 800 V	800 V	600mA	-40°C ~ 150°C	1.3 V @ 600 mA
RH 1ZV1 DIODE GEN PURP 200V 600MA AXIAL Sanken	2083	0.28	- + Ajouter au panier Demander	Datenblatt	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	4 µs	5 µA @ 200 V	200 V	600mA	-40°C ~ 150°C	1.3 V @ 600 mA
RM 2ZV1 DIODE GEN PURP 200V 1.2A AXIAL Sanken	3246	0.28	- + Ajouter au panier Demander	Datenblatt	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 200 V	200 V	1.2A	-40°C ~ 150°C	910 mV @ 1.5 A
CD5822 DIODE SMALL-SIGNAL SCHOTTKY Microchip Technology	3982	8.42	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 40 V	40 V	3A	-65°C ~ 125°C	550 mV @ 3 A
RU 1V1 DIODE GEN PURP 400V 250MA AXIAL Sanken	2173	0.28	- + Ajouter au panier Demander	Datenblatt	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	400 ns	10 µA @ 400 V	400 V	250mA	-40°C ~ 150°C	2.5 V @ 250 mA
VS-71HF60 DIODE GEN PURP 600V 70A DO203AB Vishay General Semiconductor - Diodes Division	2920	8.42	- + Ajouter au panier Demander	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	9 mA @ 600 V	600 V	70A	-65°C ~ 180°C	1.35 V @ 220 A
SJPA-L3V DIODE SCHOTTKY 30V 3A SJP Sanken	2079	0.28	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	4.5 mA @ 30 V	30 V	3A	-40°C ~ 125°C	360 mV @ 3 A
JAN1N5807US DIODE GEN PURP 50V 6A B-MELF Microchip Technology	3634	8.45	- + Ajouter au panier Demander	Datenblatt	Bulk	Military, MIL-PRF-19500/477	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	60pF @ 10V, 1MHz	30 ns	5 µA @ 50 V	50 V	6A	-65°C ~ 175°C	875 mV @ 4 A

Total 50121 Records«Prev 1... 2156 2157 2158 215921602161 2162 2163...2507 Next»

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