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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TP90H050WS

TP90H050WS

GANFET N-CH 900V 34A TO247-3

Transphorm

172 20.03
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TP90H050WS

Datenblatt

Tube - Active N-Channel GaNFET (Cascode Gallium Nitride FET) 900 V 34A (Tc) 10V 63mOhm @ 22A, 10V 4.4V @ 700µA 17.5 nC @ 10 V ±20V 980 pF @ 600 V - 119W (Tc) -55°C ~ 150°C Through Hole
NTHL027N65S3HF

NTHL027N65S3HF

MOSFET N-CH 650V 75A TO247-3

onsemi

342 20.33
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NTHL027N65S3HF

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Tube FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 27.4mOhm @ 35A, 10V 5V @ 3mA 225 nC @ 10 V ±30V 7630 pF @ 400 V - 595W (Tc) -55°C ~ 150°C (TJ) Through Hole
UJ3C065030B3

UJ3C065030B3

MOSFET N-CH 650V 65A TO263

UnitedSiC

2948 19.39
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UJ3C065030B3

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel - 650 V 65A (Tc) 12V 35mOhm @ 50A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 242W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH44N50Q3

IXFH44N50Q3

MOSFET N-CH 500V 44A TO247AD

IXYS

3839 20.83
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IXFH44N50Q3

Datenblatt

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) 10V 140mOhm @ 22A, 10V 6.5V @ 4mA 93 nC @ 10 V ±30V 4800 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF3C065040K3S

UF3C065040K3S

MOSFET N-CH 650V 54A TO247-3

UnitedSiC

2481 13.95
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UF3C065040K3S

Datenblatt

Tube - Active N-Channel - 650 V 54A (Tc) 12V 52mOhm @ 40A, 12V 6V @ 10mA 51 nC @ 15 V ±25V 1500 pF @ 100 V - 326W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFT16N120P

IXFT16N120P

MOSFET N-CH 1200V 16A TO268

IXYS

114 21.27
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IXFT16N120P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 16A (Tc) 10V 950mOhm @ 500mA, 10V 6.5V @ 1mA 120 nC @ 10 V ±30V 6900 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTX90P20P

IXTX90P20P

MOSFET P-CH 200V 90A PLUS247-3

IXYS

361 22.60
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IXTX90P20P

Datenblatt

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 44mOhm @ 22A, 10V 4V @ 1mA 205 nC @ 10 V ±20V 12000 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCT3105KRC14

SCT3105KRC14

SICFET N-CH 1200V 24A TO247-4L

Rohm Semiconductor

137 22.80
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SCT3105KRC14

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 24A (Tc) 18V 137mOhm @ 7.6A, 18V 5.6V @ 3.81mA 51 nC @ 18 V +22V, -4V 574 pF @ 800 V - 134W 175°C (TJ) Through Hole
IXFX32N100P

IXFX32N100P

MOSFET N-CH 1000V 32A PLUS247-3

IXYS

1240 22.98
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IXFX32N100P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 32A (Tc) 10V 320mOhm @ 16A, 10V 6.5V @ 1mA 225 nC @ 10 V ±30V 14200 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP65H035WSQA

TP65H035WSQA

GANFET N-CH 650V 47.2A TO247-3

Transphorm

545 23.20
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TP65H035WSQA

Datenblatt

Tube Automotive, AEC-Q101 Active N-Channel GaNFET (Cascode Gallium Nitride FET) 650 V 47.2A (Tc) 10V 41mOhm @ 32A, 10V 4.5V @ 1mA 24 nC @ 10 V ±20V 1500 pF @ 400 V - 187W (Tc) -55°C ~ 175°C (TJ) Through Hole
C3M0040120D

C3M0040120D

1200V 40MOHM SIC MOSFET

Wolfspeed, Inc.

597 24.32
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C3M0040120D

Datenblatt

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 66A (Tc) 15V 53.5mOhm @ 33.3A, 15V 3.6V @ 9.5mA 101 nC @ 15 V +15V, -4V 2900 pF @ 1000 V - 326W (Tc) -40°C ~ 175°C (TJ) Through Hole
IXTT2N170D2

IXTT2N170D2

MOSFET N-CH 1700V 2A TO268

IXYS

520 25.61
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IXTT2N170D2

Datenblatt

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1700 V 2A (Tj) - 6.5Ohm @ 1A, 0V - 110 nC @ 5 V ±20V 3650 pF @ 25 V Depletion Mode 568W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N6660

2N6660

MOSFET N-CH 60V 410MA TO39

Microchip Technology

2154 16.57
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2N6660

Datenblatt

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 410mA (Ta) 5V, 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 24 V - 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
C3M0025065K

C3M0025065K

GEN 3 650V 25 M SIC MOSFET

Wolfspeed, Inc.

930 27.87
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C3M0025065K

Datenblatt

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 97A (Tc) 15V 34mOhm @ 33.5A, 15V 3.6V @ 9.22mA 112 nC @ 15 V +19V, -8V 2980 pF @ 600 V - 326W (Tc) -40°C ~ 175°C (TJ) Through Hole
C3M0025065D

C3M0025065D

GEN 3 650V 25 M SIC MOSFET

Wolfspeed, Inc.

782 27.87
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C3M0025065D

Datenblatt

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 650 V 97A (Tc) 15V 34mOhm @ 33.5A, 15V 3.6V @ 9.22mA 108 nC @ 15 V +19V, -8V 2980 pF @ 600 V - 326W (Tc) -40°C ~ 175°C (TJ) Through Hole
IMW65R027M1HXKSA1

IMW65R027M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies

136 28.06
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Tube - Active - - - 47A (Tc) - - - - - - - - - -
IPW60R017C7XKSA1

IPW60R017C7XKSA1

HIGH POWER_NEW

Infineon Technologies

224 29.88
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IPW60R017C7XKSA1

Datenblatt

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 109A (Tc) 10V 17mOhm @ 58.2A, 10V 4V @ 2.91mA 240 nC @ 10 V ±20V 9890 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTHL020N090SC1

NTHL020N090SC1

SICFET N-CH 900V 118A TO247-3

onsemi

269 31.67
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NTHL020N090SC1

Datenblatt

Tube - Active N-Channel SiCFET (Silicon Carbide) 900 V 118A (Tc) 15V 28mOhm @ 60A, 15V 4.3V @ 20mA 196 nC @ 15 V +19V, -10V 4415 pF @ 450 V - 503W (Tc) -55°C ~ 175°C (TJ) Through Hole
TP65H015G5WS

TP65H015G5WS

650 V 95 A GAN FET

Transphorm

456 35.14
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TP65H015G5WS

Datenblatt

Tube SuperGaN™ Active N-Channel GaNFET (Gallium Nitride) 650 V 93A (Tc) 10V 18mOhm @ 60A, 10V 4.8V @ 2mA 100 nC @ 10 V ±20V 5218 pF @ 400 V - 266W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTN102N65X2

IXTN102N65X2

MOSFET N-CH 650V 76A SOT227

IXYS

220 35.21
- +

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IXTN102N65X2

Datenblatt

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 30mOhm @ 51A, 10V 5V @ 250µA 152 nC @ 10 V ±30V 10900 pF @ 25 V - 595AW (Tc) -55°C ~ 150°C (TJ) Chassis Mount
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