Photos | Le fabricant# | Stocks | Prix | Quantité | Tableau | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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IXTT1N450HVMOSFET N-CH 4500V 1A TO268 |
1530 | 50.69 |
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![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 4500 V | 1A (Tc) | 10V | 85Ohm @ 50mA, 10V | 6.5V @ 250µA | 40 nC @ 10 V | ±20V | 1730 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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UF3SC120016K3SSICFET N-CH 1200V 107A TO247-3 |
890 | 53.01 |
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![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 107A (Tc) | 12V | 21mOhm @ 50A, 12V | 6V @ 10mA | 218 nC @ 15 V | ±20V | 7824 pF @ 800 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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UF3SC120016K4SSICFET N-CH 1200V 107A TO247-4 |
2390 | 56.25 |
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![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 107A (Tc) | 12V | 21mOhm @ 50A, 12V | 6V @ 10mA | 218 nC @ 15 V | ±20V | 7824 pF @ 800 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXFN80N50MOSFET N-CH 500V 80A SOT-227B |
120 | 58.65 |
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![]() Datenblatt |
Tube | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 66A (Tc) | 10V | 55mOhm @ 500mA, 10V | 4.5V @ 8mA | 380 nC @ 10 V | ±20V | 9890 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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G3R20MT12NSIC MOSFET N-CH 105A SOT227 |
203 | 59.57 |
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![]() Datenblatt |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 105A (Tc) | 15V | 24mOhm @ 60A, 15V | 2.69V @ 15mA | 219 nC @ 15 V | +20V, -10V | 5873 pF @ 800 V | - | 365W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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IXTX90N25L2MOSFET N-CH 250V 90A PLUS247-3 |
848 | 37.67 |
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![]() Datenblatt |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 90A (Tc) | 10V | 33mOhm @ 45A, 10V | 4.5V @ 3mA | 640 nC @ 10 V | ±20V | 23000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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MSC025SMA120JSICFET N-CH 1.2KV 77A SOT227 |
404 | 61.06 |
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![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 77A (Tc) | 20V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232 nC @ 20 V | +25V, -10V | 3020 pF @ 1000 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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IXTK5N250MOSFET N-CH 2500V 5A TO264 |
228 | 67.69 |
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![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 2500 V | 5A (Tc) | 10V | 8.8Ohm @ 2.5A, 10V | 5V @ 1mA | 200 nC @ 10 V | ±30V | 8560 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXKN75N60CMOSFET N-CH 600V 75A SOT-227B |
365 | 68.13 |
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![]() Datenblatt |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 75A (Tc) | 10V | 36mOhm @ 50A, 10V | 3.9V @ 5mA | 500 nC @ 10 V | ±20V | - | Super Junction | 560W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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IXTF02N450MOSFET N-CH 4500V 200MA I4PAC |
553 | 44.39 |
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![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 4500 V | 200mA (Tc) | 10V | 750Ohm @ 10mA, 10V | 6.5V @ 250µA | 10.4 nC @ 10 V | ±20V | 256 pF @ 25 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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UF3SC065007K4SMOSFET N-CH 650V 120A TO247-4 |
948 | 78.82 |
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![]() Datenblatt |
Tube | - | Active | N-Channel | - | 650 V | 120A (Tc) | 12V | 9mOhm @ 50A, 12V | 6V @ 10mA | 214 nC @ 15 V | ±20V | - | - | 789W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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UF3SC120009K4SSICFET N-CH 1200V 120A TO247-4 |
2331 | 86.77 |
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![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 120A (Tc) | 12V | 11mOhm @ 100A, 12V | 6V @ 10mA | 234 nC @ 15 V | ±20V | 8512 pF @ 100 V | - | 789W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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APL502JMOSFET N-CH 500V 52A ISOTOP |
191 | 87.35 |
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![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 52A (Tc) | 15V | 90mOhm @ 26A, 12V | 4V @ 2.5mA | - | ±30V | 9000 pF @ 25 V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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NTHL020N120SC1SICFET N-CH 1200V 103A TO247-3 |
2989 | 53.04 |
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![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 103A (Tc) | 20V | 28mOhm @ 60A, 20V | 4.3V @ 20mA | 203 nC @ 20 V | +25V, -15V | 2890 pF @ 800 V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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SCT3022KLGC11SICFET N-CH 1200V 95A TO247N |
229 | 54.85 |
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![]() Datenblatt |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 95A (Tc) | 18V | 28.6mOhm @ 36A, 18V | 5.6V @ 18.2mA | 178 nC @ 10 V | +22V, -4V | 2879 pF @ 800 V | - | 427W | 175°C (TJ) | Through Hole |
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G3R20MT17KSIC MOSFET N-CH 124A TO247-4 |
273 | 113.64 |
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Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 124A (Tc) | 15V | 26mOhm @ 75A, 15V | 2.7V @ 15mA | 400 nC @ 15 V | ±15V | 10187 pF @ 1000 V | - | 809W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
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G2R120MT33JSIC MOSFET N-CH TO263-7 |
217 | 114.52 |
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![]() Datenblatt |
Tube | G2R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 35A | 20V | 156mOhm @ 20A, 20V | - | 145 nC @ 20 V | +25V, -10V | 3706 pF @ 1000 V | - | - | -55°C ~ 175°C (TJ) | Surface Mount |
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IXTL2N450MOSFET N-CH 4500V 2A I5PAK |
156 | 125.73 |
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![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 4500 V | 2A (Tc) | 10V | 23Ohm @ 1A, 10V | 6V @ 250µA | 156 nC @ 10 V | ±20V | 6900 pF @ 25 V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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VMO1200-01FMOSFET N-CH 100V 1220A Y3-LI |
3659 | 158.94 |
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![]() Datenblatt |
Tray | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1220A (Tc) | 10V | 1.35mOhm @ 932A, 10V | 4V @ 64mA | 2520 nC @ 10 V | ±20V | - | - | - | -40°C ~ 150°C (TJ) | Chassis Mount |
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SSM3K72KCT,L3FMOSFET N-CH 60V 400MA CST3 |
223136 | 0.26 |
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![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVII-H | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 40 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |