Photos | Le fabricant# | Stocks | Prix | Quantité | Tableau | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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SPW20N60C3FKSA1MOSFET N-CH 650V 20.7A TO247-3 |
18487 | 7.61 |
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Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXTP140P05TMOSFET P-CH 50V 140A TO220AB |
1494 | 7.65 |
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Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 140A (Tc) | 10V | 9mOhm @ 70A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±15V | 13500 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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2SK1835-EMOSFET N-CH 1500V 4A TO3P |
2432 | 7.85 |
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Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 4A (Ta) | 15V | 7Ohm @ 2A, 15V | - | - | ±20V | 1700 pF @ 10 V | - | 125W (Tc) | 150°C (TJ) | Through Hole |
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IXTA96P085TMOSFET P-CH 85V 96A TO263 |
3395 | 7.10 |
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Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 85 V | 96A (Tc) | 10V | 13mOhm @ 48A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±15V | 13100 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SPP20N60C3XKSA1MOSFET N-CH 600V 20.7A TO220-3 |
3148 | 7.20 |
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![]() Datenblatt |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPA60R099C6XKSA1MOSFET N-CH 600V 37.9A TO220-FP |
13113 | 8.14 |
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![]() Datenblatt |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 37.9A (Tc) | 10V | 99mOhm @ 18.1A, 10V | 3.5V @ 1.21mA | 119 nC @ 10 V | ±20V | 2660 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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G3R450MT17JSIC MOSFET N-CH 9A TO263-7 |
7574 | 8.52 |
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Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 9A (Tc) | 15V | 585mOhm @ 4A, 15V | 2.7V @ 2mA | 18 nC @ 15 V | ±15V | 454 pF @ 1000 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPP110N20N3GXKSA1MOSFET N-CH 200V 88A TO220-3 |
5787 | 9.34 |
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Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 88A (Tc) | 10V | 11mOhm @ 88A, 10V | 4V @ 270µA | 87 nC @ 10 V | ±20V | 7100 pF @ 100 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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UF3C170400K3SSICFET N-CH 1700V 7.6A TO247-3 |
20849 | 9.48 |
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Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1700 V | 7.6A (Tc) | 12V | 515mOhm @ 5A, 12V | 6V @ 10mA | 27.5 nC @ 15 V | ±25V | 740 pF @ 100 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPW60R060P7XKSA1MOSFET N-CH 600V 48A TO247-3 |
2205 | 8.55 |
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Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 48A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 67 nC @ 10 V | ±20V | 2895 pF @ 400 V | - | 164W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IPT60R050G7XTMA1MOSFET N-CH 650V 44A 8HSOF |
2580 | 12.93 |
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![]() Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ G7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 44A (Tc) | 10V | 50mOhm @ 15.9A, 10V | 4V @ 800µA | 68 nC @ 10 V | ±20V | 2670 pF @ 400 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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UJ4C075060K4SSICFET N-CH 750V 28A TO247-4 |
2828 | 10.59 |
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Tube | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 750 V | 28A (Tc) | - | 74mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1422 pF @ 100 V | - | 155W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPP60R099CPXKSA1MOSFET N-CH 650V 31A TO220-3 |
365 | 10.75 |
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![]() Datenblatt |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 31A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80 nC @ 10 V | ±20V | 2800 pF @ 100 V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFH60N50P3MOSFET N-CH 500V 60A TO247AD |
4200 | 10.78 |
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Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 60A (Tc) | 10V | 100mOhm @ 30A, 10V | 5V @ 4mA | 96 nC @ 10 V | ±30V | 6250 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SCT3160KLGC11SICFET N-CH 1200V 17A TO247N |
1333 | 10.99 |
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Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 18V | 208mOhm @ 5A, 18V | 5.6V @ 2.5mA | 42 nC @ 18 V | +22V, -4V | 398 pF @ 800 V | - | 103W (Tc) | 175°C (TJ) | Through Hole |
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IPP110N20NAAKSA1MOSFET N-CH 200V 88A TO220-3 |
1490 | 11.21 |
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Tube | OptimWatt™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 88A (Tc) | 10V | 10.7mOhm @ 88A, 10V | 4V @ 270µA | 87 nC @ 10 V | ±20V | 7100 pF @ 100 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXFH50N20MOSFET N-CH 200V 50A TO247AD |
2136 | 11.23 |
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![]() Datenblatt |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 200 V | 50A (Tc) | 10V | 45mOhm @ 25A, 10V | 4V @ 4mA | 220 nC @ 10 V | ±20V | 4400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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G3R75MT12KSIC MOSFET N-CH 41A TO247-4 |
951 | 11.42 |
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![]() Datenblatt |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 41A (Tc) | 15V | 90mOhm @ 20A, 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | ±15V | 1560 pF @ 800 V | - | 207W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IXTH15N50L2MOSFET N-CH 500V 15A TO247 |
813 | 11.66 |
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Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Tc) | 10V | 480mOhm @ 7.5A, 10V | 4.5V @ 250µA | 123 nC @ 10 V | ±20V | 4080 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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G3R75MT12JSIC MOSFET N-CH 42A TO263-7 |
2540 | 11.69 |
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![]() Datenblatt |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 42A (Tc) | 15V | 90mOhm @ 20A, 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | ±15V | 1560 pF @ 800 V | - | 224W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |