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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IGW40T120FKSA1

IGW40T120FKSA1

IGBT 1200V 75A TO247-3

Infineon Technologies

3020 7.29
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IGW40T120FKSA1

Datenblatt

Tube TrenchStop® Active NPT, Trench Field Stop 1200 V 75 A 105 A 2.3V @ 15V, 40A 270 W 6.5mJ Standard 203 nC 48ns/480ns 600V, 40A, 15Ohm, 15V - -40°C ~ 150°C (TJ) Through Hole
IXXX200N60C3

IXXX200N60C3

IGBT 600V 200A PLUS247

IXYS

3288 23.96
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IXXX200N60C3

Datenblatt

Tube XPT™, GenX3™ Active PT 600 V 340 A 900 A 2.1V @ 15V, 100A - 3mJ (on), 1.7mJ (off) Standard 315 nC 47ns/125ns 360V, 100A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXYR100N120C3

IXYR100N120C3

IGBT 1200V 104A 484W ISOPLUS247

IXYS

3384 27.31
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IXYR100N120C3

Datenblatt

Tube GenX3™, XPT™ Active - 1200 V 104 A 480 A 3.5V @ 15V, 100A 484 W 6.5mJ (on), 2.9mJ (off) Standard 270 nC 32ns/123ns 600V, 100A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXYK140N120A4

IXYK140N120A4

IGBT 140A 1200V TO264

IXYS

100 40.44
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IXYK140N120A4

Datenblatt

Tube XPT™, GenX4™ Active PT 1200 V 480 A 1200 A 1.7V @ 15V, 140A 1500 W 4.9mJ (on), 12mJ (off) Standard 420 nC 52ns/590ns 600V, 70A, 1.5Ohm, 15V 47 ns -55°C ~ 175°C (TJ) Through Hole
MMIX1X200N60B3H1

MMIX1X200N60B3H1

IGBT 600V 175A 520W SMPD

IXYS

2813 45.79
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MMIX1X200N60B3H1

Datenblatt

Tube GenX3™, XPT™ Active - 600 V 175 A 1000 A 1.7V @ 15V, 100A 520 W 2.85mJ (on), 2.9mJ (off) Standard 315 nC 48ns/160ns 360V, 100A, 1Ohm, 15V 100 ns -55°C ~ 150°C (TJ) Surface Mount
IXGT2N250

IXGT2N250

IGBT 2500V 5.5A 32W TO-268

IXYS

3456 65.88
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IXGT2N250

Datenblatt

Tube - Active - 2500 V 5.5 A 13.5 A 3.1V @ 15V, 2A 32 W - Standard 10.5 nC - - - -55°C ~ 150°C (TJ) Surface Mount
STGWA30HP65FB2

STGWA30HP65FB2

TRENCH GATE FIELD-STOP 650 V, 30

STMicroelectronics

2968 3.09
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STGWA30HP65FB2

Datenblatt

Tube HB2 Active Trench Field Stop 650 V 50 A 90 A 2.1V @ 15V, 30A 167 W - Standard 90 nC -/71ns 400V, 30A, 6.8Ohm, 15V 140 ns -55°C ~ 175°C (TJ) Through Hole
STGWA20H65DFB2

STGWA20H65DFB2

TRENCH GATE FIELD-STOP 650 V, 20

STMicroelectronics

3550 3.10
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Tube HB2 Active Trench Field Stop 650 V 40 A 60 A 2.1V @ 15V, 20A 147 W 265µJ (on), 214µJ (off) Standard 56 nC 16ns/78.8ns 400V, 20A, 10Ohm, 15V 215 ns -55°C ~ 175°C (TJ) Through Hole
AOKS30B60D1

AOKS30B60D1

IGBT 600V 30A TO247

Alpha & Omega Semiconductor Inc.

3863 3.11
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AOKS30B60D1

Datenblatt

Tube Alpha IGBT™ Active - 600 V 60 A 96 A 2.5V @ 15V, 30A 208 W 1.1mJ (on), 240µJ (off) Standard 34 nC 20ns/58ns 400V, 30A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
FGAF40N60UFTU

FGAF40N60UFTU

IGBT 600V 40A TO3PF

onsemi

223 3.67
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FGAF40N60UFTU

Datenblatt

Tube - Active - 600 V 40 A 160 A 3V @ 15V, 20A 100 W 470µJ (on), 130µJ (off) Standard 77 nC 15ns/65ns 300V, 20A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
STGWA40HP65FB2

STGWA40HP65FB2

TRENCH GATE FIELD-STOP, 650 V, 4

STMicroelectronics

2338 4.19
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STGWA40HP65FB2

Datenblatt

Tube HB2 Active Trench Field Stop 650 V 72 A 120 A 2V @ 15V, 40A 227 W 410µJ (off) Standard 153 nC -/125ns 400V, 40A, 4.7Ohm, 15V 140 ns -55°C ~ 175°C (TJ) Through Hole
RGW40TS65DGC11

RGW40TS65DGC11

650V 20A FIELD STOP TRENCH IGBT

Rohm Semiconductor

450 5.45
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Tube - Active Trench Field Stop 650 V 40 A 80 A 1.9V @ 15V, 20A 136 W 330µJ (on), 300µJ (off) Standard 59 nC 33ns/76ns 400V, 20A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGW50TK65GVC11

RGW50TK65GVC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor

450 450.00
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Tube - Active Trench Field Stop 650 V 30 A 100 A 1.9V @ 15V, 25A 67 W 390µJ (on), 430µJ (off) Standard 73 nC 35ns/102ns 400V, 25A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGTV80TS65GC11

RGTV80TS65GC11

650V 40A FIELD STOP TRENCH IGBT

Rohm Semiconductor

450 5.60
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Tube - Active Trench Field Stop 650 V 78 A 160 A 1.9V @ 15V, 40A 234 W 1.02mJ (on), 710µJ (off) Standard 81 nC 39ns/113ns 400V, 40A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGW50TS65DGC11

RGW50TS65DGC11

650V 25A FIELD STOP TRENCH IGBT

Rohm Semiconductor

446 5.66
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Tube - Active Trench Field Stop 650 V 50 A 100 A 1.9V @ 15V, 25A 156 W 390µJ (on), 430µJ (off) Standard 73 nC 35ns/102ns 400V, 25A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGTV80TK65GVC11

RGTV80TK65GVC11

2US SHORT-CIRCUIT TOLERANCE, 650

Rohm Semiconductor

450 6.37
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Tube - Active Trench Field Stop 650 V 39 A 160 A 1.9V @ 15V, 40A 85 W 1.02mJ (on), 710µJ (off) Standard 81 nC 39ns/113ns 400V, 40A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGW50TK65DGVC11

RGW50TK65DGVC11

HIGH-SPEED FAST SWITCHING TYPE

Rohm Semiconductor

450 450.00
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Tube - Active Trench Field Stop 650 V 30 A 100 A 1.9V @ 15V, 25A 67 W 390µJ (on), 430µJ (off) Standard 73 nC 35ns/102ns 400V, 25A, 10Ohm, 15V 92 ns -40°C ~ 175°C (TJ) Through Hole
APT35GA90BD15

APT35GA90BD15

IGBT 900V 63A 290W TO247

Microchip Technology

2632 6.44
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APT35GA90BD15

Datenblatt

Tube - Active PT 900 V 63 A 105 A 3.1V @ 15V, 18A 290 W 642µJ (on), 382µJ (off) Standard 84 nC 12ns/104ns 600V, 18A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXBF9N160G

IXBF9N160G

IGBT 1600V 7A 70W I4PAC

IXYS

3438 6.44
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IXBF9N160G

Datenblatt

Tube BIMOSFET™ Active - 1600 V 7 A - 7V @ 15V, 5A 70 W - Standard 34 nC - 960V, 5A, 27Ohm, 10V - -55°C ~ 150°C (TJ) Through Hole
APT25GR120S

APT25GR120S

IGBT 1200V 75A 521W D3PAK

Microchip Technology

2116 6.59
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APT25GR120S

Datenblatt

Bulk - Active NPT 1200 V 75 A 100 A 3.2V @ 15V, 25A 521 W 742µJ (on), 427µJ (off) Standard 203 nC 16ns/122ns 600V, 25A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
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