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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IKFW50N60ETXKSA1

IKFW50N60ETXKSA1

INDUSTRY 14

Infineon Technologies

2622 6.35
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IKFW50N60ETXKSA1

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Tube TrenchStop™ Active Trench Field Stop 600 V 73 A 150 A 2V @ 15V, 50A 164 W 1.5mJ (on), 1.42mJ (off) Standard 290 nC 28ns/305ns 400V, 50A, 7Ohm, 15V 91 ns -40°C ~ 175°C (TJ) Through Hole
APT54GA60B

APT54GA60B

IGBT 600V 96A 416W TO-247

Microchip Technology

3267 6.39
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APT54GA60B

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Tube POWER MOS 8™ Active PT 600 V 96 A 161 A 2.5V @ 15V, 32A 416 W 534µJ (on), 466µJ (off) Standard 158 nC 17ns/112ns 400V, 32A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IKFW90N65ES5XKSA1

IKFW90N65ES5XKSA1

INDUSTRY 14 PG-HSIP247-3

Infineon Technologies

2469 6.28
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IKFW90N65ES5XKSA1

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Tube TrenchStop™ Active Trench Field Stop 650 V 80 A 300 A 1.75V @ 15V, 75A 154 W 2.5mJ (on), 990µJ (off) Standard 165 nC 42ns/151ns 400V, 75A, 16Ohm, 15V 89 ns -40°C ~ 175°C (TJ) Through Hole
APT15GP90BDQ1G

APT15GP90BDQ1G

IGBT 900V 43A 250W TO247

Microchip Technology

2545 6.42
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APT15GP90BDQ1G

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Tube POWER MOS 7® Active PT 900 V 43 A 60 A 3.9V @ 15V, 15A 250 W 200µJ (off) Standard 60 nC 9ns/33ns 600V, 15A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXGH36N60B3

IXGH36N60B3

IGBT 600V 92A 250W TO247

IXYS

3318 6.45
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IXGH36N60B3

Datenblatt

Tube GenX3™ Active PT 600 V 92 A 200 A 1.8V @ 15V, 30A 250 W 540µJ (on), 800µJ (off) Standard 80 nC 19ns/125ns 400V, 30A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXYH20N65C3D1

IXYH20N65C3D1

DISC IGBT XPT-GENX4 TO-247AD

IXYS

2956 6.46
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Tube XPT™, GenX3™ Active PT 650 V 50 A 105 A 2.5V @ 15V, 20A 230 W 430µJ (on), 350µJ (off) Standard 30 nC 19ns/80ns 400V, 20A, 20Ohm, 15V 34 ns -55°C ~ 175°C (TJ) Through Hole
APT20GN60SDQ2G

APT20GN60SDQ2G

IGBT FIELDSTOP COMBI 600V 20A TO

Microchip Technology

3755 6.46
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APT20GN60SDQ2G

Datenblatt

Tube - Active Trench Field Stop 600 V 40 A 60 A 1.9V @ 15V, 20A 136 W 230µJ (on), 580µJ (off) Standard 120 nC 9ns/140ns 400V, 20A, 4.3Ohm, 15V 30 ns -55°C ~ 175°C (TJ) Surface Mount
APT13GP120BG

APT13GP120BG

IGBT 1200V 41A 250W TO247

Microchip Technology

2827 6.53
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APT13GP120BG

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Tube POWER MOS 7® Active PT 1200 V 41 A 50 A 3.9V @ 15V, 13A 250 W 115µJ (on), 165µJ (off) Standard 55 nC 9ns/28ns 600V, 13A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXGH50N90B2

IXGH50N90B2

IGBT 900V 75A 400W TO247

IXYS

3266 6.64
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IXGH50N90B2

Datenblatt

Tube HiPerFAST™ Active PT 900 V 75 A 200 A 2.7V @ 15V, 50A 400 W 4.7mJ (off) Standard 135 nC 20ns/350ns 720V, 50A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXYP30N120C3

IXYP30N120C3

IGBT 1200V 75A 500W TO220

IXYS

3847 6.64
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IXYP30N120C3

Datenblatt

Tube GenX3™, XPT™ Active - 1200 V 75 A 145 A 3.3V @ 15V, 30A 500 W 2.6mJ (on), 1.1mJ (off) Standard 69 nC 19ns/130ns 600V, 30A, 10Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXXH60N65C4

IXXH60N65C4

IGBT 650V 118A 455W TO247AD

IXYS

3437 6.65
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IXXH60N65C4

Datenblatt

Tube GenX4™, XPT™ Active PT 650 V 118 A 240 A 2.2V @ 15V, 60A 455 W 3.2mJ (on), 830µJ (off) Standard 94 nC 37ns/133ns 400V, 60A, 5Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IKW60N60H3FKSA1

IKW60N60H3FKSA1

IGBT TRENCH/FS 600V 80A TO247-3

Infineon Technologies

3647 1.00
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IKW60N60H3FKSA1

Datenblatt

Bulk,Tube TrenchStop™ Active Trench Field Stop 600 V 80 A 180 A 2.3V @ 15V, 60A 416 W 2.1mJ (on), 1.13mJ (off) Standard 375 nC 27ns/252ns 400V, 60A, 6Ohm, 15V 143 ns -40°C ~ 175°C (TJ) Through Hole
APT15GN120BDQ1G

APT15GN120BDQ1G

IGBT 1200V 45A 195W TO247

Microchip Technology

3921 6.88
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APT15GN120BDQ1G

Datenblatt

Tube - Active Trench Field Stop 1200 V 45 A 45 A 2.1V @ 15V, 15A 195 W 410µJ (on), 950µJ (off) Standard 90 nC 10ns/150ns 800V, 15A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT50GT60BRG

APT50GT60BRG

IGBT 600V 110A 446W TO247

Microchip Technology

3812 6.96
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APT50GT60BRG

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Tube Thunderbolt IGBT® Active NPT 600 V 110 A 150 A 2.5V @ 15V, 50A 446 W 995µJ (on), 1070µJ (off) Standard 240 nC 14ns/240ns 400V, 50A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXYH30N65C3H1

IXYH30N65C3H1

IGBT 650V 60A 270W TO247

IXYS

2663 6.98
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IXYH30N65C3H1

Datenblatt

Tube GenX3™, XPT™ Active PT 650 V 60 A 118 A 2.7V @ 15V, 30A 270 W 1mJ (on), 270µJ (off) Standard 44 nC 21ns/75ns 400V, 30A, 10Ohm, 15V 120 ns -55°C ~ 175°C (TJ) Through Hole
APT44GA60BD30

APT44GA60BD30

IGBT 600V 78A 337W TO-247

Microchip Technology

3555 7.02
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APT44GA60BD30

Datenblatt

Tube POWER MOS 8™ Active PT 600 V 78 A 130 A 2.5V @ 15V, 26A 337 W 409µJ (on), 258µJ (off) Standard 128 nC 16ns/84ns 400V, 26A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXYH50N65C3D1

IXYH50N65C3D1

IGBT

IXYS

3786 7.03
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IXYH50N65C3D1

Datenblatt

Tube XPT™, GenX3™ Active - 650 V 132 A 250 A 2.1V @ 15V, 36A 600 W 800µJ (on), 800µJ (off) Standard 86 nC 20ns/90ns 400V, 36A, 5Ohm, 15V 36 ns -55°C ~ 175°C (TJ) Through Hole
APT75GN60BG

APT75GN60BG

IGBT 600V 155A 536W TO247

Microchip Technology

2265 7.04
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APT75GN60BG

Datenblatt

Tube - Active Trench Field Stop 600 V 155 A 225 A 1.85V @ 15V, 75A 536 W 2500µJ (on), 2140µJ (off) Standard 485 nC 47ns/385ns 400V, 75A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXYA30N120A4HV

IXYA30N120A4HV

DISC IGBT XPT-GENX4 TO-263D2

IXYS

3966 7.12
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Tube GenX4™, XPT™ Active PT 1200 V 106 A 184 A 1.9V @ 15V, 25A 500 W 4mJ (on), 3.4mJ (off) Standard 57 nC 15ns/235ns 960V, 25A, 5Ohm, 15V 42 ns -55°C ~ 175°C (TJ) Surface Mount
IXBT16N170AHV

IXBT16N170AHV

IGBT

IXYS

3035 15.53
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IXBT16N170AHV

Datenblatt

Tube BIMOSFET™ Active - 1700 V 16 A 40 A 6V @ 15V, 10A 150 W 2.5mJ (off) Standard 65 nC 15ns/250ns 1360V, 10A, 10Ohm, 15V 25 ns -55°C ~ 150°C (TJ) Surface Mount
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