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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTQ44P15T

IXTQ44P15T

MOSFET P-CH 150V 44A TO3P

IXYS

112 7.03
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IXTQ44P15T

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Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 150 V 44A (Tc) 10V 65mOhm @ 500mA, 10V 4V @ 250µA 175 nC @ 10 V ±15V 13400 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA62N25C

FQA62N25C

MOSFET N-CH 250V 62A TO3PN

onsemi

427 7.06
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FQA62N25C

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Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 250 V 62A (Tc) 10V 35mOhm @ 31A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 6280 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ26N50P

IXTQ26N50P

MOSFET N-CH 500V 26A TO3P

IXYS

237 7.14
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IXTQ26N50P

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Tube Polar Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5.5V @ 250µA 65 nC @ 10 V ±30V 3600 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP75N08A

FDP75N08A

MOSFET N-CH 75V 75A TO220-3

onsemi

1990 2.88
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FDP75N08A

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Tube UniFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 11mOhm @ 37.5A, 10V 4V @ 250µA 104 nC @ 10 V ±20V 4468 pF @ 25 V - 137W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP057N08N3GXKSA1

IPP057N08N3GXKSA1

MOSFET N-CH 80V 80A TO220-3

Infineon Technologies

1473 2.90
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IPP057N08N3GXKSA1

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Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 5.7mOhm @ 80A, 10V 3.5V @ 90µA 69 nC @ 10 V ±20V 4750 pF @ 40 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOTF15S60L

AOTF15S60L

MOSFET N-CH 600V 15A TO220-3F

Alpha & Omega Semiconductor Inc.

1701 2.92
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AOTF15S60L

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Tube aMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 7.5A, 10V 3.8V @ 250µA 15.6 nC @ 10 V ±30V 717 pF @ 100 V - 27.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP052N08N5AKSA1

IPP052N08N5AKSA1

MOSFET N-CH 80V 80A TO220-3

Infineon Technologies

3760 2.93
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IPP052N08N5AKSA1

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Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 5.2mOhm @ 80A, 10V 3.8V @ 66µA 53 nC @ 10 V ±20V 3770 pF @ 40 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOTF66616L

AOTF66616L

MOSFET N-CH 60V 38A/72.5A TO220F

Alpha & Omega Semiconductor Inc.

849 2.97
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AOTF66616L

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Tube AlphaSGT™ Active N-Channel MOSFET (Metal Oxide) 60 V 38A (Ta), 72.5A (Tc) 6V, 10V 3.3mOhm @ 20A, 10V 3.4V @ 250µA 60 nC @ 10 V ±20V 2870 pF @ 30 V - 8.3W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB9N65APBF

IRFB9N65APBF

MOSFET N-CH 650V 8.5A TO220AB

Vishay Siliconix

2510 2.98
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IRFB9N65APBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 8.5A (Tc) 10V 930mOhm @ 5.1A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 1417 pF @ 25 V - 167W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA186N60EF-GE3

SIHA186N60EF-GE3

MOSFET N-CH 600V 8.4A TO220

Vishay Siliconix

2000 2.99
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SIHA186N60EF-GE3

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Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 8.4A (Tc) 10V 193mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1081 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIBC30GPBF

IRFIBC30GPBF

MOSFET N-CH 600V 2.5A TO220-3

Vishay Siliconix

4084 3.03
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IRFIBC30GPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 2.5A (Tc) 10V 2.2Ohm @ 1.5A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP25N60M2-EP

STP25N60M2-EP

MOSFET N-CH 600V 18A TO220

STMicroelectronics

174 3.03
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STP25N60M2-EP

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Tube MDmesh™ M2-EP Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 188mOhm @ 9A, 10V 4.75V @ 250µA 29 nC @ 10 V ±25V 1090 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM60NB900CH C5G

TSM60NB900CH C5G

MOSFET N-CHANNEL 600V 4A TO251

Taiwan Semiconductor Corporation

14043 3.04
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TSM60NB900CH C5G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 900mOhm @ 1.2A, 10V 4V @ 250µA 9.6 nC @ 10 V ±30V 315 pF @ 100 V - 36.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA24P085T

IXTA24P085T

MOSFET P-CH 85V 24A TO263

IXYS

5814 3.07
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IXTA24P085T

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Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 85 V 24A (Tc) 10V 65mOhm @ 12A, 10V 4.5V @ 250µA 41 nC @ 10 V ±15V 2090 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI740GPBF

IRFI740GPBF

MOSFET N-CH 400V 5.4A TO220-3

Vishay Siliconix

1686 3.07
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IRFI740GPBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 5.4A (Tc) 10V 550mOhm @ 3.2A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 1370 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS11N50APBF

IRFS11N50APBF

MOSFET N-CH 500V 11A D2PAK

Vishay Siliconix

984 3.08
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IRFS11N50APBF

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STU6N95K5

STU6N95K5

MOSFET N-CH 950V 9A IPAK

STMicroelectronics

1410 3.09
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STU6N95K5

Datenblatt

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 950 V 9A (Tc) 10V 1.25Ohm @ 3A, 10V 5V @ 100µA 13 nC @ 10 V ±30V 450 pF @ 100 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP15N60E-GE3

SIHP15N60E-GE3

MOSFET N-CH 600V 15A TO220AB

Vishay Siliconix

682 3.09
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SIHP15N60E-GE3

Datenblatt

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 78 nC @ 10 V ±30V 1350 pF @ 100 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB186N60EF-GE3

SIHB186N60EF-GE3

MOSFET N-CH 600V 8.4A D2PAK

Vishay Siliconix

3000 3.10
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SIHB186N60EF-GE3

Datenblatt

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 8.4A (Tc) 10V 193mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1081 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI840GLCPBF

IRFI840GLCPBF

MOSFET N-CH 500V 4.5A TO220-3

Vishay Siliconix

990 3.10
- +

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IRFI840GLCPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 850mOhm @ 2.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
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