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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDP032N08B-F102

FDP032N08B-F102

MOSFET N-CH 80V 120A TO220-3

onsemi

177 3.09
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FDP032N08B-F102

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Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.3mOhm @ 100A, 10V 4.5V @ 250µA 144 nC @ 10 V ±20V 10965 pF @ 40 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3803SPBF

IRL3803SPBF

HEXFET POWER MOSFET

International Rectifier

231 1.46
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IRL3803SPBF

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 6mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQA12N60

FQA12N60

MOSFET N-CH 600V 12A TO3P

Fairchild Semiconductor

9750 1.47
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FQA12N60

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 700mOhm @ 6A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1900 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK4006DPP-G1#T2

RJK4006DPP-G1#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

8032 1.47
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Bulk * Active - - - - - - - - - - - - - -
FDP2670

FDP2670

MOSFET N-CH 200V 19A TO220-3

Fairchild Semiconductor

6893 1.47
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FDP2670

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Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 19A (Ta) 10V 130mOhm @ 10A, 10V 4.5V @ 250µA 38 nC @ 10 V ±20V 1320 pF @ 100 V - 93W (Tc) -65°C ~ 175°C (TJ) Through Hole
2SK2869-92STR

2SK2869-92STR

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

6000 1.47
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Bulk * Active - - - - - - - - - - - - - -
SPW12N50C3

SPW12N50C3

N-CHANNEL POWER MOSFET

Infineon Technologies

2729 1.47
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SPW12N50C3

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Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 11.6A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 49 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP4N90

FQP4N90

MOSFET N-CH 900V 4.2A TO220-3

Fairchild Semiconductor

2156 1.47
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FQP4N90

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Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 4.2A (Tc) 10V 3.3Ohm @ 2.1A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1100 pF @ 25 V - 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK190A65Z,S4X

TK190A65Z,S4X

MOSFET N-CH 650V 15A TO220SIS

Toshiba Semiconductor and Storage

175 3.15
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TK190A65Z,S4X

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Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 190mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 40W (Tc) 150°C Through Hole
FDS7060N7

FDS7060N7

MOSFET N-CH 30V 19A 8SO

Fairchild Semiconductor

8663 1.48
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FDS7060N7

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Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta) 4.5V, 10V 5mOhm @ 19A, 10V 3V @ 250µA 56 nC @ 5 V ±20V 3274 pF @ 15 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF542

IRF542

N-CHANNEL POWER MOSFET

Harris Corporation

7679 1.48
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IRF542

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Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 25A (Tc) 10V 100mOhm @ 17A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1450 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP246

IRFP246

N-CHANNEL POWER MOSFET

Harris Corporation

5674 1.48
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IRFP246

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Bulk - Active N-Channel MOSFET (Metal Oxide) 275 V 15A (Tc) 10V 280mOhm @ 10A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF12N60C-FS

FQPF12N60C-FS

12A, 600V, 0.65OHM, N-CHANNEL

Fairchild Semiconductor

2700 2700.00
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FQPF12N60C-FS

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Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 650mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±30V 2290 pF @ 25 V - 51W (Tc) -55°C ~ 150°C (TJ)
IRF3808PBF

IRF3808PBF

MOSFET N-CH 75V 140A TO220AB

Infineon Technologies

206 3.18
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IRF3808PBF

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Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 140A (Tc) 10V 7mOhm @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 5310 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP150NF04

STP150NF04

MOSFET N-CH 40V 80A TO220AB

STMicroelectronics

826 3.19
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STP150NF04

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Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 7mOhm @ 40A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 3650 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
RF1S70N03

RF1S70N03

MOSFET N-CH 30V 70A TO262AA

Harris Corporation

789 1.48
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RF1S70N03

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Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) - 10mOhm @ 70A, 10V 4V @ 250µA 260 nC @ 20 V ±20V 3300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTP190N65S3HF

NTP190N65S3HF

MOSFET N-CH 650V 20A TO220-3

onsemi

312 3.20
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NTP190N65S3HF

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Tube FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 430µA 34 nC @ 10 V ±30V 1610 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA7N90

FQA7N90

MOSFET N-CH 900V 7.4A TO3P

Fairchild Semiconductor

939 1.49
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FQA7N90

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 7.4A (Tc) 10V 1.55Ohm @ 3.7A, 10V 5V @ 250µA 59 nC @ 10 V ±30V 2280 pF @ 25 V - 198W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SJ350

2SJ350

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

652 1.49
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2SJ350

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Bulk * Active - - - - - - - - - - - - - -
FDB8442-F085-FS

FDB8442-F085-FS

28A, 40V, 0.0029OHM, N-CHANNEL

Fairchild Semiconductor

351 351.00
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FDB8442-F085-FS

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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 28A (Ta), 80A (Tc) 10V 2.9mOhm @ 80A, 10V 4V @ 250µA 235 nC @ 10 V ±20V 12200 pF @ 25 V - 254W (Tc) -55°C ~ 175°C (TJ)
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