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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RJK0216DPA-WS#J53

RJK0216DPA-WS#J53

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

2135 0.97
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Bulk * Active - - - - - - - - - - - - - -
FQPF8N60CYDTU

FQPF8N60CYDTU

MOSFET N-CH 600V 7.5A TO220F-3

Fairchild Semiconductor

1924 0.97
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FQPF8N60CYDTU

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.5A (Tc) 10V 1.2Ohm @ 3.75A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1255 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S9630SM

RF1S9630SM

P-CHANNEL POWER MOSFET

Harris Corporation

1650 0.97
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RF1S9630SM

Datenblatt

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 6.5A - - - - - - - - - Surface Mount
RJK1525DPS-00#T2

RJK1525DPS-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

1467 0.97
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RJK1525DPS-00#T2

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FQPF12N60T

FQPF12N60T

MOSFET N-CH 600V 5.8A TO220F

Fairchild Semiconductor

1336 0.97
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FQPF12N60T

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.8A (Tc) 10V 700mOhm @ 2.9A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1900 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK5R1A08QM,S4X

TK5R1A08QM,S4X

UMOS10 TO-220SIS 80V 5.1MOHM

Toshiba Semiconductor and Storage

2518 1.67
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TK5R1A08QM,S4X

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Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 6V, 10V 5.1mOhm @ 35A, 10V 3.5V @ 700µA 54 nC @ 10 V ±20V 3980 pF @ 40 V - 45W (Tc) 175°C Through Hole
IPP030N06NF2SAKMA1

IPP030N06NF2SAKMA1

TRENCH 40<-<100V PG-TO220-3

Infineon Technologies

1000 1.68
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IPP030N06NF2SAKMA1

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Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 26A (Ta), 119A (Tc) 6V, 10V 3.05mOhm @ 70A, 10V 3.3V @ 80µA 102 nC @ 10 V ±20V 4600 pF @ 30 V - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD65R380E6

IPD65R380E6

MOSFET N-CH 650V 10.6A TO252-3

Infineon Technologies

5090 0.98
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IPD65R380E6

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Bulk CoolMOS™ E6 Active N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) - 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB5N80AE-GE3

SIHB5N80AE-GE3

E SERIES POWER MOSFET D2PAK (TO-

Vishay Siliconix

890 1.69
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Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 4.4A (Tc) 10V 1.35Ohm @ 1.5A, 10V 4V @ 250µA 16.5 nC @ 10 V ±30V 321 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9Z10PBF-BE3

IRF9Z10PBF-BE3

MOSFET P-CH 60V 6.7A TO220AB

Vishay Siliconix

862 1.70
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IRF9Z10PBF-BE3

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Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) - 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDS5692Z

FDS5692Z

MOSFET N-CH 50V 5.8A 8SOIC

Fairchild Semiconductor

8231 0.99
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FDS5692Z

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Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 50 V 5.8A (Ta) 4.5V, 10V 24mOhm @ 5.8A, 10V 3V @ 250µA 25 nC @ 10 V ±20V 1025 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FX20ASJ-03F-T13#X3

FX20ASJ-03F-T13#X3

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

5876 0.99
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UPA2714GR-E1-A

UPA2714GR-E1-A

P-CHANNEL SWITCHING POWER MOSFET

Renesas Electronics America Inc

5000 0.99
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UPA2714GR-E1-A

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
RF1S50N06LE

RF1S50N06LE

N-CHANNEL POWER MOSFET

Harris Corporation

4042 0.99
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FDS7296N3

FDS7296N3

MOSFET N-CH 30V 15A 8SO

Fairchild Semiconductor

2499 0.99
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FDS7296N3

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Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 8mOhm @ 15A, 10V 3V @ 250µA 32 nC @ 10 V ±20V 1540 pF @ 15 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
HUFA76445P3

HUFA76445P3

MOSFET N-CH 60V 75A TO220-3

Fairchild Semiconductor

518 0.99
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HUFA76445P3

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Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 6.5mOhm @ 75A, 10V 3V @ 250µA 150 nC @ 10 V ±16V 4965 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS654B

IRFS654B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

9857 1.00
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IRFS654B

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Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 21A (Tj) 10V 140mOhm @ 10.5A, 10V 4V @ 250µA 123 nC @ 10 V ±30V 3400 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDU2572

FDU2572

MOSFET N-CH 150V 4A/29A IPAK

Fairchild Semiconductor

8957 1.00
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FDU2572

Datenblatt

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 4A (Ta), 29A (Tc) 6V, 10V 54mOhm @ 9A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1770 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSB012N03LX3G

BSB012N03LX3G

N-CHANNEL POWER MOSFET

Infineon Technologies

5766 1.00
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BSB012N03LX3G

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Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 39A (Ta), 180A (Tc) 4.5V, 10V 1.2mOhm @ 30A, 10V 2.2V @ 250µA 169 nC @ 10 V ±20V 16900 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
R8002ANJGTL

R8002ANJGTL

NCH 800V 2A POWER MOSFET : R8002

Rohm Semiconductor

1000 3.25
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R8002ANJGTL

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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 4.3Ohm @ 1A, 10V 5V @ 1mA 13 nC @ 10 V ±30V 250 pF @ 25 V - 62W (Tc) 150°C (TJ) Surface Mount
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