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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQP11N40

FQP11N40

MOSFET N-CH 400V 11.4A TO220-3

Fairchild Semiconductor

1919 0.83
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FQP11N40

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 11.4A (Tc) 10V 480mOhm @ 5.7A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 1400 pF @ 25 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB022N04LG

IPB022N04LG

N-CHANNEL POWER MOSFET

Infineon Technologies

1840 0.83
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IPB022N04LG

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Bulk * Active - - - - - - - - - - - - - -
RF1S45N03L

RF1S45N03L

N-CHANNEL POWER MOSFET

Harris Corporation

770 0.83
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RF1S45N03L

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 5V 22mOhm @ 45A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1650 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI100N04S3-03

IPI100N04S3-03

N-CHANNEL POWER MOSFET

Infineon Technologies

722 0.83
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IPI100N04S3-03

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Bulk * Active - - - - - - - - - - - - - -
FDD5810

FDD5810

MOSFET N-CH 60V 7.4A/37A DPAK

Fairchild Semiconductor

540 0.83
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FDD5810

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Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 7.4A (Ta), 37A (Tc) 5V, 10V 22mOhm @ 32A, 10V 2V @ 250µA 34 nC @ 10 V ±20V 1890 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPI07N65C3

SPI07N65C3

N-CHANNEL POWER MOSFET

Infineon Technologies

500 0.83
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SPI07N65C3

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Bulk * Active - - - - - - - - - - - - - -
SPI07N65C3IN

SPI07N65C3IN

N-CHANNEL POWER MOSFET

Infineon Technologies

2868 0.00
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SPI07N65C3IN

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
RJK03J0DPA-00#J5A

RJK03J0DPA-00#J5A

N-CHANNEL POWER SWITCHING MOSFET

Renesas Electronics America Inc

9000 0.84
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Bulk * Active - - - - - - - - - - - - - -
AUIRFR3504TRL

AUIRFR3504TRL

MOSFET N-CH 40V 56A DPAK

International Rectifier

8645 0.84
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AUIRFR3504TRL

Datenblatt

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 56A (Tc) - 9.2mOhm @ 30A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 2150 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RJK0233DPA-00#J5A

RJK0233DPA-00#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

6000 0.84
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Bulk * Active - - - - - - - - - - - - - -
BUK6E2R0-30C127

BUK6E2R0-30C127

N-CHANNEL POWER MOSFET

NXP USA Inc.

4728 0.84
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BUK6E2R0-30C127

Datenblatt

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 2.2mOhm @ 25A, 10V 2.8V @ 1mA 229 nC @ 10 V ±16V 14964 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDU6696

FDU6696

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3600 0.84
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FDU6696

Datenblatt

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 50A (Tc) 4.5V, 10V 8mOhm @ 13A, 10V 3V @ 250µA 24 nC @ 5 V ±16V 1715 pF @ 15 V - 1.6W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75831SK8T

HUF75831SK8T

MOSFET N-CH 150V 3A 8SOIC

Fairchild Semiconductor

1663 0.84
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HUF75831SK8T

Datenblatt

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 3A (Ta) 10V 95mOhm @ 3A, 10V 4V @ 250µA 80 nC @ 20 V ±20V 1175 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL1404PBF-INF

IRL1404PBF-INF

MOSFET N-CH 40V 160A TO220AB

Infineon Technologies

4574 1.06
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IRL1404PBF-INF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) - 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6590 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
UPA2720GR-E1-A

UPA2720GR-E1-A

MOSFET N-CH 30V 14A 8PSOP

Renesas Electronics America Inc

2500 1.06
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UPA2720GR-E1-A

Datenblatt

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) - 6.6mOhm @ 7A, 10V 2.5V @ 1mA 27 nC @ 5 V - 2800 pF @ 10 V - - - Surface Mount
RF1S9630

RF1S9630

P-CHANNEL POWER MOSFET

Harris Corporation

2400 1.06
- +

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Bulk * Active - - - - - - - - - - - - - -
2SK973L-E

2SK973L-E

GENERAL SWITCHING POWER MOSFET

Renesas Electronics America Inc

1709 1.06
- +

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Bulk * Obsolete - - - - - - - - - - - - - -
RFP12N18

RFP12N18

N-CHANNEL POWER MOSFET

Harris Corporation

1550 1.06
- +

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RFP12N18

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 180 V 12A (Tc) 10V 250mOhm @ 12A, 10V 4V @ 250µA - ±20V 1700 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD210

IRFD210

0.6A 200V 1.500 OHM N-CHANNEL

Harris Corporation

1014 0.84
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IRFD210

Datenblatt

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 600mA (Ta) 10V 1.5Ohm @ 360mA, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
RJJ0315DSP-WS#J5

RJJ0315DSP-WS#J5

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

885 0.84
- +

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Bulk * Active - - - - - - - - - - - - - -
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