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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SJ317NYTR

2SJ317NYTR

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc

4000 0.57
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2SJ317NYTR

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Bulk * Obsolete - - - - - - - - - - - - - -
RFD14N06

RFD14N06

N-CHANNEL POWER MOSFET

Harris Corporation

3664 0.57
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RFD14N06

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Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 14A, 10V 4V @ 250µA 40 nC @ 20 V ±20V 570 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76439P3

HUFA76439P3

MOSFET N-CH 60V 75A TO220-3

Fairchild Semiconductor

1551 0.57
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HUFA76439P3

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Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 12mOhm @ 75A, 10V 3V @ 250µA 84 nC @ 10 V ±16V 2745 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75333S3

HUF75333S3

MOSFET N-CH 55V 66A I2PAK

Fairchild Semiconductor

1488 0.57
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HUF75333S3

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Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) 10V 16mOhm @ 66A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF9N25CT

FQPF9N25CT

MOSFET N-CH 250V 8.8A TO220F

Fairchild Semiconductor

1343 0.57
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FQPF9N25CT

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 710 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN8R5-100ESQ

PSMN8R5-100ESQ

POWER FIELD-EFFECT TRANSISTOR, 1

NXP USA Inc.

975 0.57
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PSMN8R5-100ESQ

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Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tj) 10V 8.5mOhm @ 25A, 10V 4V @ 1mA 111 nC @ 10 V ±20V 5512 pF @ 50 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
UPA1816GR-9JG-E1-A

UPA1816GR-9JG-E1-A

MOSFET P-CH 12V 9A 8TSSOP

Renesas Electronics America Inc

9000 0.58
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UPA1816GR-9JG-E1-A

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Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 12 V 9A (Ta) - 15mOhm @ 4.5A, 4.5V 1.5V @ 1mA 15 nC @ 4 V - 1570 pF @ 10 V - - - Surface Mount
FDM606P

FDM606P

MOSFET P-CH 20V 6.8A 8MLP

Fairchild Semiconductor

9587 0.59
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FDM606P

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Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6.8A (Tc) 1.8V, 4.5V 30mOhm @ 6.8A, 4.5V 1.5V @ 250µA 30 nC @ 4.5 V ±8V 2200 pF @ 10 V - 1.92W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQPF6N40C

FQPF6N40C

MOSFET N-CH 400V 6A TO220F

Fairchild Semiconductor

7450 0.59
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FQPF6N40C

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 625 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF6N50

FQPF6N50

MOSFET N-CH 500V 3.6A TO220F

Fairchild Semiconductor

5884 0.59
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FQPF6N50

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3.6A (Tc) 10V 1.3Ohm @ 1.8A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 790 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD213

IRFD213

MOSFET N-CH 250V 450MA 4DIP

Harris Corporation

5563 0.59
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IRFD213

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Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 450mA (Ta) - 2Ohm @ 270mA, 10V 4V @ 250µA 8.2 nC @ 10 V - 140 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
RF1S23N06LESM

RF1S23N06LESM

N-CHANNEL POWER MOSFET

Harris Corporation

5549 0.59
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RF1S23N06LESM

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Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 23A - - - - - - - - - Surface Mount
SPD50N03S2-07G

SPD50N03S2-07G

N-CHANNEL POWER MOSFET

Infineon Technologies

4956 0.59
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SPD50N03S2-07G

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
FQP16N15

FQP16N15

MOSFET N-CH 150V 16.4A TO220-3

Fairchild Semiconductor

4866 0.59
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FQP16N15

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 16.4A (Tc) 10V 160mOhm @ 8.2A, 10V 4V @ 250µA 30 nC @ 10 V ±25V 910 pF @ 25 V - 108W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDU6030BL

FDU6030BL

MOSFET N-CH 30V 10A/42A IPAK

Fairchild Semiconductor

3525 0.59
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FDU6030BL

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Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 42A (Tc) 4.5V, 10V 16mOhm @ 10A, 10V 3V @ 250µA 31 nC @ 10 V ±20V 1143 pF @ 15 V - 3.8W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQU2N80TU

FQU2N80TU

MOSFET N-CH 800V 1.8A IPAK

Fairchild Semiconductor

3038 0.59
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FQU2N80TU

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 6.3Ohm @ 900mA, 10V 5V @ 250µA 15 nC @ 10 V ±30V 550 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF5N60CYDTU

FQPF5N60CYDTU

MOSFET N-CH 600V 4.5A TO220F-3

Fairchild Semiconductor

2878 0.59
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FQPF5N60CYDTU

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Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 2.5Ohm @ 2.25A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 670 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDU7030BL

FDU7030BL

MOSFET N-CH 30V 14A/56A IPAK

Fairchild Semiconductor

2400 0.59
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FDU7030BL

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Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 56A (Tc) 4.5V, 10V 9.5mOhm @ 14A, 10V 3V @ 250µA 20 nC @ 5 V ±20V 1425 pF @ 15 V - 2.8W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76129S3S

HUF76129S3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1850 0.59
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HUF76129S3S

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Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 30 V 56A (Tc) 4.5V, 10V 16Ohm @ 56A, 10V 3V @ 250µA 45 nC @ 10 V ±20V 1350 pF @ 25 V - 105W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FQP7P20

FQP7P20

MOSFET P-CH 200V 7.3A TO220-3

Fairchild Semiconductor

1518 0.59
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FQP7P20

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Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 200 V 7.3A (Tc) 10V 690mOhm @ 3.65A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 770 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
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