Photos | Le fabricant# | Stocks | Prix | Quantité | Tableau | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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IXTH11P50MOSFET P-CH 500V 11A TO247 |
300 | 12.50 |
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Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 5V @ 250µA | 130 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IPW60R070C6FKSA1MOSFET N-CH 600V 53A TO247-3 |
408 | 12.52 |
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Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 53A (Tc) | 10V | 70mOhm @ 25.8A, 10V | 3.5V @ 1.72mA | 170 nC @ 10 V | ±20V | 3800 pF @ 100 V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IXTH90P10PMOSFET P-CH 100V 90A TO247 |
4240 | 12.93 |
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Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 90A (Tc) | 10V | 25mOhm @ 45A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 5800 pF @ 25 V | - | 462W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
IXTH48P20PMOSFET P-CH 200V 48A TO247 |
4857 | 12.93 |
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Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 48A (Tc) | 10V | 85mOhm @ 500mA, 10V | 4.5V @ 250µA | 103 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 462W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IPW60R041C6FKSA1MOSFET N-CH 600V 77.5A TO247-3 |
3065 | 19.55 |
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Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 77.5A (Tc) | 10V | 41mOhm @ 44.4A, 10V | 3.5V @ 2.96mA | 290 nC @ 10 V | ±20V | 6530 pF @ 10 V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
IPW60R045CPAFKSA1MOSFET N-CH 600V 60A TO247-3 |
2781 | 24.71 |
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Tube | Automotive, AEC-Q101, CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190 nC @ 10 V | ±20V | 6800 pF @ 100 V | - | 431W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | |
IPW60R018CFD7XKSA1MOSFET N CH |
591 | 27.31 |
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Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 101A (Tc) | 10V | 18mOhm @ 58.2A, 10V | 4.5V @ 2.91mA | 251 nC @ 10 V | ±20V | 9901 pF @ 400 V | - | 416W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
SCT3080KLHRC11SICFET N-CH 1200V 31A TO247N |
249 | 27.95 |
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Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 18V | 104mOhm @ 10A, 18V | 5.6V @ 5mA | 60 nC @ 18 V | +22V, -4V | 785 pF @ 800 V | - | 165W | 175°C (TJ) | Through Hole | |
IRLR7843TRPBFMOSFET N-CH 30V 161A DPAK |
2300 | 1.73 |
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Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 161A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50 nC @ 4.5 V | ±20V | 4380 pF @ 15 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
FDD86102LZMOSFET N-CH 100V 8A/35A DPAK |
7915 | 1.68 |
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Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 8A (Ta), 35A (Tc) | 4.5V, 10V | 22.5mOhm @ 8A, 10V | 3V @ 250µA | 26 nC @ 10 V | ±20V | 1540 pF @ 50 V | - | 3.1W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
FDD18N20LZMOSFET N-CH 200V 16A DPAK |
29562 | 1.68 |
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Tape & Reel (TR),Cut Tape (CT) | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 16A (Tc) | 5V, 10V | 125mOhm @ 8A, 10V | 2.5V @ 250µA | 40 nC @ 10 V | ±20V | 1575 pF @ 25 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
EPC2214GANFET N-CH 80V 10A DIE |
35566 | 1.69 |
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Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | GaNFET (Gallium Nitride) | 80 V | 10A (Ta) | 5V | 20mOhm @ 6A, 5V | 2.5V @ 2mA | 2.2 nC @ 5 V | +6V, -4V | 238 pF @ 40 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | |
CSD25402Q3ATMOSFET P-CH 20V 15A/76A 8VSON |
130 | 1.18 |
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Tape & Reel (TR),Cut Tape (CT) | NexFET™ | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 15A (Ta), 76A (Tc) | 1.8V, 4.5V | 8.9mOhm @ 10A, 4.5V | 1.15V @ 250µA | 9.7 nC @ 4.5 V | ±12V | 1790 pF @ 10 V | - | 2.8W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
SQD50N04-5M6_T4GE3MOSFET N-CH 40V 50A TO252AA |
39988 | 1.75 |
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Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 5.6mOhm @ 20A, 10V | 3.5V @ 250µA | 85 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
IRFR5410TRPBFMOSFET P-CH 100V 13A DPAK |
65598 | 1.80 |
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Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±20V | 760 pF @ 25 V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
IRLZ24NSTRLPBFMOSFET N-CH 55V 18A D2PAK |
18901 | 1.38 |
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Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15 nC @ 5 V | ±16V | 480 pF @ 25 V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
BSZ028N04LSATMA1MOSFET N-CH 40V 21A/40A TSDSON |
15444 | 1.80 |
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Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 21A (Ta), 40A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | - | 32 nC @ 10 V | ±20V | 2300 pF @ 20 V | - | 2.1W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
FDMS86320MOSFET N-CH 80V 10.5A/22A 8PQFN |
11910 | 1.74 |
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Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 10.5A (Ta), 22A (Tc) | 8V, 10V | 11.7mOhm @ 10.5A, 10V | 4.5V @ 250µA | 41 nC @ 10 V | ±20V | 2640 pF @ 40 V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
SIR165DP-T1-GE3MOSFET P-CH 30V 60A PPAK SO-8 |
15070 | 1.72 |
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Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen III | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 4.6mOhm @ 15A, 10V | 2.3V @ 250µA | 138 nC @ 10 V | ±20V | 4930 pF @ 15 V | - | 69.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
SIR878BDP-T1-RE3MOSFET N-CH 100V 12A/42.5A PPAK |
10552 | 1.78 |
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Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Ta), 42.5A (Tc) | 7.5V, 10V | 14.4mOhm @ 15A, 10V | 3.4V @ 250µA | 38 nC @ 10 V | ±20V | 1850 pF @ 50 V | - | 5W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |