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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTH11P50

IXTH11P50

MOSFET P-CH 500V 11A TO247

IXYS

300 12.50
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IXTH11P50

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 750mOhm @ 5.5A, 10V 5V @ 250µA 130 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R070C6FKSA1

IPW60R070C6FKSA1

MOSFET N-CH 600V 53A TO247-3

Infineon Technologies

408 12.52
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IPW60R070C6FKSA1

Datenblatt

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 53A (Tc) 10V 70mOhm @ 25.8A, 10V 3.5V @ 1.72mA 170 nC @ 10 V ±20V 3800 pF @ 100 V - 391W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH90P10P

IXTH90P10P

MOSFET P-CH 100V 90A TO247

IXYS

4240 12.93
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IXTH90P10P

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Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 10V 25mOhm @ 45A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 5800 pF @ 25 V - 462W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH48P20P

IXTH48P20P

MOSFET P-CH 200V 48A TO247

IXYS

4857 12.93
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IXTH48P20P

Datenblatt

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 200 V 48A (Tc) 10V 85mOhm @ 500mA, 10V 4.5V @ 250µA 103 nC @ 10 V ±20V 5400 pF @ 25 V - 462W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R041C6FKSA1

IPW60R041C6FKSA1

MOSFET N-CH 600V 77.5A TO247-3

Infineon Technologies

3065 19.55
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IPW60R041C6FKSA1

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Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 77.5A (Tc) 10V 41mOhm @ 44.4A, 10V 3.5V @ 2.96mA 290 nC @ 10 V ±20V 6530 pF @ 10 V - 481W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R045CPAFKSA1

IPW60R045CPAFKSA1

MOSFET N-CH 600V 60A TO247-3

Infineon Technologies

2781 24.71
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IPW60R045CPAFKSA1

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Tube Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 45mOhm @ 44A, 10V 3.5V @ 3mA 190 nC @ 10 V ±20V 6800 pF @ 100 V - 431W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPW60R018CFD7XKSA1

IPW60R018CFD7XKSA1

MOSFET N CH

Infineon Technologies

591 27.31
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IPW60R018CFD7XKSA1

Datenblatt

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 101A (Tc) 10V 18mOhm @ 58.2A, 10V 4.5V @ 2.91mA 251 nC @ 10 V ±20V 9901 pF @ 400 V - 416W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCT3080KLHRC11

SCT3080KLHRC11

SICFET N-CH 1200V 31A TO247N

Rohm Semiconductor

249 27.95
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SCT3080KLHRC11

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Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 785 pF @ 800 V - 165W 175°C (TJ) Through Hole
IRLR7843TRPBF

IRLR7843TRPBF

MOSFET N-CH 30V 161A DPAK

Infineon Technologies

2300 1.73
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IRLR7843TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 161A (Tc) 4.5V, 10V 3.3mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4380 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD86102LZ

FDD86102LZ

MOSFET N-CH 100V 8A/35A DPAK

onsemi

7915 1.68
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FDD86102LZ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 8A (Ta), 35A (Tc) 4.5V, 10V 22.5mOhm @ 8A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 1540 pF @ 50 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD18N20LZ

FDD18N20LZ

MOSFET N-CH 200V 16A DPAK

onsemi

29562 1.68
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FDD18N20LZ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 5V, 10V 125mOhm @ 8A, 10V 2.5V @ 250µA 40 nC @ 10 V ±20V 1575 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
EPC2214

EPC2214

GANFET N-CH 80V 10A DIE

EPC

35566 1.69
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EPC2214

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel GaNFET (Gallium Nitride) 80 V 10A (Ta) 5V 20mOhm @ 6A, 5V 2.5V @ 2mA 2.2 nC @ 5 V +6V, -4V 238 pF @ 40 V - - -40°C ~ 150°C (TJ) Surface Mount
CSD25402Q3AT

CSD25402Q3AT

MOSFET P-CH 20V 15A/76A 8VSON

Texas Instruments

130 1.18
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CSD25402Q3AT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active P-Channel MOSFET (Metal Oxide) 20 V 15A (Ta), 76A (Tc) 1.8V, 4.5V 8.9mOhm @ 10A, 4.5V 1.15V @ 250µA 9.7 nC @ 4.5 V ±12V 1790 pF @ 10 V - 2.8W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQD50N04-5M6_T4GE3

SQD50N04-5M6_T4GE3

MOSFET N-CH 40V 50A TO252AA

Vishay Siliconix

39988 1.75
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SQD50N04-5M6_T4GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 5.6mOhm @ 20A, 10V 3.5V @ 250µA 85 nC @ 10 V ±20V 4000 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR5410TRPBF

IRFR5410TRPBF

MOSFET P-CH 100V 13A DPAK

Infineon Technologies

65598 1.80
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IRFR5410TRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 205mOhm @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLZ24NSTRLPBF

IRLZ24NSTRLPBF

MOSFET N-CH 55V 18A D2PAK

Infineon Technologies

18901 1.38
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IRLZ24NSTRLPBF

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Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ028N04LSATMA1

BSZ028N04LSATMA1

MOSFET N-CH 40V 21A/40A TSDSON

Infineon Technologies

15444 1.80
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BSZ028N04LSATMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta), 40A (Tc) 4.5V, 10V 2.8mOhm @ 20A, 10V - 32 nC @ 10 V ±20V 2300 pF @ 20 V - 2.1W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS86320

FDMS86320

MOSFET N-CH 80V 10.5A/22A 8PQFN

onsemi

11910 1.74
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FDMS86320

Datenblatt

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 10.5A (Ta), 22A (Tc) 8V, 10V 11.7mOhm @ 10.5A, 10V 4.5V @ 250µA 41 nC @ 10 V ±20V 2640 pF @ 40 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR165DP-T1-GE3

SIR165DP-T1-GE3

MOSFET P-CH 30V 60A PPAK SO-8

Vishay Siliconix

15070 1.72
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SIR165DP-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 4.6mOhm @ 15A, 10V 2.3V @ 250µA 138 nC @ 10 V ±20V 4930 pF @ 15 V - 69.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR878BDP-T1-RE3

SIR878BDP-T1-RE3

MOSFET N-CH 100V 12A/42.5A PPAK

Vishay Siliconix

10552 1.78
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SIR878BDP-T1-RE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Ta), 42.5A (Tc) 7.5V, 10V 14.4mOhm @ 15A, 10V 3.4V @ 250µA 38 nC @ 10 V ±20V 1850 pF @ 50 V - 5W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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