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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SJ463A(0)-T1-A

2SJ463A(0)-T1-A

SMALL SIGNAL P-CHANNEL MOSFET

Renesas Electronics America Inc

123000 0.17
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2SJ463A(0)-T1-A

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Bulk * Active - - - - - - - - - - - - - -
FDFC2P100

FDFC2P100

MOSFET P-CH 20V 3A SUPERSOT6

Fairchild Semiconductor

115946 0.17
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FDFC2P100

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Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 150mOhm @ 3A, 4.5V 1.5V @ 250µA 4.7 nC @ 10 V ±12V 445 pF @ 10 V Schottky Diode (Isolated) 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NDS335N

NDS335N

MOSFET N-CH 20V 1.7A SUPERSOT3

Fairchild Semiconductor

103522 0.17
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NDS335N

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Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1.7A (Ta) 2.7V, 4.5V 110mOhm @ 1.7A, 4.5V 1V @ 250µA 9 nC @ 4.5 V 8V 240 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
ON5257215

ON5257215

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.

96000 0.17
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Bulk * Active - - - - - - - - - - - - - -
MTSF3N02HDR2

MTSF3N02HDR2

SMALL SIGNAL N-CHANNEL MOSFET

onsemi

88000 0.17
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MTSF3N02HDR2

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Bulk * Active - - - - - - - - - - - - - -
IRFS614B

IRFS614B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

80881 0.17
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IRFS614B

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Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 2.8A (Tj) 10V 2Ohm @ 1.4A, 10V 4V @ 250µA 10.5 nC @ 10 V ±30V 275 pF @ 25 V - 22W (Tc) -55°C ~ 150°C (TJ) Through Hole
BB502MBS-TR-E

BB502MBS-TR-E

RF N-CHANNEL MOSFET

Renesas Electronics America Inc

78000 0.17
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BB502MBS-TR-E

Datenblatt

Bulk * Obsolete - - - - - - - - - - - - - -
SPD1305NL

SPD1305NL

N-CHANNEL POWER MOSFET

Infineon Technologies

75000 0.17
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Bulk * Active - - - - - - - - - - - - - -
BB502CBS-TL-H

BB502CBS-TL-H

RF N-CHANNEL MOSFET

Renesas Electronics America Inc

60000 0.17
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BB502CBS-TL-H

Datenblatt

Bulk * Obsolete - - - - - - - - - - - - - -
BB503CCS-TL-H

BB503CCS-TL-H

RF N-CHANNEL MOSFET

Renesas Electronics America Inc

60000 0.17
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Bulk * Obsolete - - - - - - - - - - - - - -
CPH6603-TL-E

CPH6603-TL-E

P-CHANNEL SILICON MOSFET

onsemi

60000 0.17
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Bulk * Active - - - - - - - - - - - - - -
2SK3378ENTL-E

2SK3378ENTL-E

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc

59755 0.17
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2SK3378ENTL-E

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Bulk * Active - - - - - - - - - - - - - -
2SJ463A(91)-T1-A

2SJ463A(91)-T1-A

SMALL SIGNAL P-CHANNEL MOSFET

Renesas Electronics America Inc

57000 0.17
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2SJ463A(91)-T1-A

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Bulk * Active - - - - - - - - - - - - - -
FDN363N

FDN363N

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

58788 0.17
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FDN363N

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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 1A (Tc) 6V, 10V 240mOhm @ 1A, 10V 4V @ 250µA 5.2 nC @ 10 V ±20V 200 pF @ 25 V - 500mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
BB503CCS-TL-E

BB503CCS-TL-E

RF N-CHANNEL MOSFET

Renesas Electronics America Inc

54000 0.17
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BB503CCS-TL-E

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Bulk * Obsolete - - - - - - - - - - - - - -
SPU08N05L

SPU08N05L

N-CHANNEL POWER MOSFET

Infineon Technologies

54000 0.17
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Bulk * Active - - - - - - - - - - - - - -
IRFS634B

IRFS634B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

41000 0.17
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IRFS634B

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Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tj) 10V 450mOhm @ 4.05A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1000 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SJ463A(0)-T1-AT

2SJ463A(0)-T1-AT

SMALL SIGNAL P-CHANNEL MOSFET

Renesas Electronics America Inc

36000 0.17
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2SJ463A(0)-T1-AT

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Bulk * Active - - - - - - - - - - - - - -
NVD14N03RT4G

NVD14N03RT4G

N-CHANNEL POWER MOSFET

onsemi

34386 0.17
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NVD14N03RT4G

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Bulk * Active - - - - - - - - - - - - - -
SI3456DV

SI3456DV

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor

37010 0.17
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SI3456DV

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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 5.1A (Ta) 4.5V, 10V 45mOhm @ 5.1A, 10V 2V @ 250µA 12.6 nC @ 10 V ±20V 463 pF @ 15 V - 800mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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