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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK17V65W,LQ

TK17V65W,LQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

7475 3.26
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TK17V65W,LQ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 17.3A (Ta) 10V 210mOhm @ 8.7A, 10V 3.5V @ 900µA 45 nC @ 10 V ±30V 1800 pF @ 300 V - 156W (Tc) 150°C Surface Mount
STD5NK40Z-1

STD5NK40Z-1

MOSFET N-CH 400V 3A IPAK

STMicroelectronics

2996 1.71
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STD5NK40Z-1

Datenblatt

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 400 V 3A (Tc) 10V 1.8Ohm @ 1.5A, 10V 4.5V @ 50µA 17 nC @ 10 V ±30V 305 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF380A60CL

AOTF380A60CL

MOSFET N-CH 600V 11A TO220F

Alpha & Omega Semiconductor Inc.

3988 1.81
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AOTF380A60CL

Datenblatt

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tj) 10V 380mOhm @ 5.5A, 10V 3.8V @ 250µA 20 nC @ 10 V ±20V 955 pF @ 100 V - 27W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9640PBF-BE3

IRF9640PBF-BE3

MOSFET P-CH 200V 11A TO220AB

Vishay Siliconix

1990 2.14
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Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF6N62K3

STF6N62K3

MOSFET N-CH 620V 5.5A TO220FP

STMicroelectronics

1017 2.30
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STF6N62K3

Datenblatt

Tube SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 620 V 5.5A (Tc) 10V 1.28Ohm @ 2.8A, 10V 4.5V @ 50µA 34 nC @ 10 V ±30V 875 pF @ 50 V - 30W (Tc) 150°C (TJ) Through Hole
TSM4NB65CH C5G

TSM4NB65CH C5G

MOSFET N-CHANNEL 650V 4A TO251

Taiwan Semiconductor Corporation

10528 2.34
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TSM4NB65CH C5G

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 3.37Ohm @ 2A, 10V 4.5V @ 250µA 13.46 nC @ 10 V ±30V 549 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCU850N80Z

FCU850N80Z

MOSFET N-CH 800V 6A IPAK

onsemi

1753 2.50
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FCU850N80Z

Datenblatt

Tube SuperFET® II Last Time Buy N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 850mOhm @ 3A, 10V 4.5V @ 600µA 29 nC @ 10 V ±20V 1315 pF @ 100 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
STU7NM60N

STU7NM60N

MOSFET N-CH 600V 5A IPAK

STMicroelectronics

4902 2.55
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STU7NM60N

Datenblatt

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 900mOhm @ 2.5A, 10V 4V @ 250µA 14 nC @ 10 V ±25V 363 pF @ 50 V - 45W (Tc) 150°C (TJ) Through Hole
TK28V65W,LQ

TK28V65W,LQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

4960 5.01
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TK28V65W,LQ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 120mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 240W (Tc) 150°C Surface Mount
IRFI9520GPBF

IRFI9520GPBF

MOSFET P-CH 100V 5.2A TO220-3

Vishay Siliconix

1172 2.59
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IRFI9520GPBF

Datenblatt

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 5.2A (Tc) 10V 600mOhm @ 3.1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP16N65M2

STP16N65M2

MOSFET N-CH 650V 11A TO220

STMicroelectronics

1831 2.65
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STP16N65M2

Datenblatt

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 19.5 nC @ 10 V ±25V 718 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK28V65W5,LQ

TK28V65W5,LQ

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

4980 5.31
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TK28V65W5,LQ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 140mOhm @ 13.8A, 10V 4.5V @ 1.6mA 90 nC @ 10 V ±30V 3000 pF @ 300 V - 240W (Tc) 150°C Surface Mount
EPC2069

EPC2069

GAN FET 40V .002OHM 8BUMP DIE

EPC

9928 5.31
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EPC2069

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel GaNFET (Gallium Nitride) 40 V - - - - - - - - - - -
TK22A65X,S5X

TK22A65X,S5X

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage

188 4.02
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TK22A65X,S5X

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Ta) 10V 150mOhm @ 11A, 10V 3.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 300 V - 45W (Tc) 150°C Through Hole
IXFP10N60P

IXFP10N60P

MOSFET N-CH 600V 10A TO220AB

IXYS

590 4.06
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IXFP10N60P

Datenblatt

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 740mOhm @ 5A, 10V 5.5V @ 1mA 32 nC @ 10 V ±30V 1610 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI740GLCPBF

IRFI740GLCPBF

MOSFET N-CH 400V 5.7A TO220-3

Vishay Siliconix

1058 4.08
- +

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IRFI740GLCPBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 5.7A (Tc) 10V 550mOhm @ 3.4A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF11N60NT

FCPF11N60NT

MOSFET N-CH 600V 10.8A TO220F

onsemi

660 4.27
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FCPF11N60NT

Datenblatt

Tube SuperMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 10.8A (Tc) 10V 299mOhm @ 5.4A, 10V 4V @ 250µA 35.6 nC @ 10 V ±30V 1505 pF @ 100 V - 32.1W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA21N80AE-GE3

SIHA21N80AE-GE3

MOSFET N-CH 800V 7.5A TO220

Vishay Siliconix

1004 2.93
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Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 7.5A (Tc) 10V 235mOhm @ 11A, 10V 4V @ 250µA 72 nC @ 10 V ±30V 1388 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP190N60

FCP190N60

MOSFET N-CH 600V 20.2A TO220-3

onsemi

796 2.97
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FCP190N60

Datenblatt

Tube SuperFET® II Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 199mOhm @ 10A, 10V 3.5V @ 250µA 74 nC @ 10 V ±20V 2950 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFSL9N60APBF

IRFSL9N60APBF

MOSFET N-CH 600V 9.2A I2PAK

Vishay Siliconix

457 2.99
- +

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IRFSL9N60APBF

Datenblatt

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
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