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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series ProductStatus TransistorType Frequency Gain Voltage-Test CurrentRating(Amps) NoiseFigure Current-Test Power-Output Voltage-Rated
BLC10G22XS-603AVTY

BLC10G22XS-603AVTY

BLC10G22XS-603AVTY/SOT1258/REEL

Ampleon USA Inc.

100 93.78
- +

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BLC10G22XS-603AVTY

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS (Dual), Common Source 2.11GHz ~ 2.17GHz 15.4dB 30 V 2.8µA - 1.2 A 600W 65 V
MRF7S19120NR1

MRF7S19120NR1

RF L BAND, N-CHANNEL , TO-270

Freescale Semiconductor

110 62.81
- +

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MRF7S19120NR1

Datenblatt

Bulk - Active LDMOS 1.99GHz 18dB 28 V - - 1.2 A 36W 65 V
MMRF1305HR5

MMRF1305HR5

FET RF 2CH 133V 512MHZ NI-780-4

NXP USA Inc.

2086 94.57
- +

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MMRF1305HR5

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS (Dual) 512MHz 26dB 50 V - - 100 mA 100W 133 V
MRF7S38040HSR3

MRF7S38040HSR3

RF S BAND, N-CHANNEL

Freescale Semiconductor

280 65.24
- +

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MRF7S38040HSR3

Datenblatt

Bulk - Active LDMOS 3.4GHz ~ 3.6GHz 14dB 30 V - - 450 mA 8W 65 V
MRF18060BLSR3

MRF18060BLSR3

RF L BAND, N-CHANNEL

Freescale Semiconductor

224 65.31
- +

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MRF18060BLSR3

Datenblatt

Bulk - Active N-Channel 1.93GHz ~ 1.99GHz 13dB 26 V 6µA - 500 mA 60W 65 V
MWT-PH15F

MWT-PH15F

MED POWER ALGAAS/INGAAS PHEMT

Microwave Technology Inc.

2632 97.18
- +

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MWT-PH15F

Datenblatt

Case - Active MESFET 28GHz 12dB 4 V 170mA - 170 mA 28.5dBm 6 V
BLF7G24LS-140,118

BLF7G24LS-140,118

N-CHANNEL, MOSFET

NXP USA Inc.

970 65.43
- +

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BLF7G24LS-140,118

Datenblatt

Bulk - Active LDMOS 2.3GHz ~ 2.4GHz 18.5dB 28 V 28A - 1.3 A 30W 65 V
MRF6S21100HR3

MRF6S21100HR3

RF S BAND, N-CHANNEL

Freescale Semiconductor

203 66.37
- +

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MRF6S21100HR3

Datenblatt

Bulk - Active LDMOS 2.11GHz ~ 2.17GHz 15.9dB 28 V 10µA - 950 mA 23W 68 V
MRF5S21150HR3

MRF5S21150HR3

RF S BAND, N-CHANNEL

Freescale Semiconductor

316 66.56
- +

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MRF5S21150HR3

Datenblatt

Bulk - Active LDMOS 2.11GHz ~ 2.17GHz 12.5dB 28 V - - 1.3 A 33W 65 V
MRF8P23080HSR3

MRF8P23080HSR3

RF POWER N-CHANNEL, MOSFET

Freescale Semiconductor

450 67.02
- +

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MRF8P23080HSR3

Datenblatt

Bulk - Obsolete LDMOS (Dual) 2.3GHz 14.6dB 28 V - - 280 mA 16W 65 V
MRF5S4140HR5

MRF5S4140HR5

FET RF 65V 465MHZ NI-780

Freescale Semiconductor

640 67.07
- +

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Bulk - Active LDMOS 465MHz 21dB 28 V - - 1.25 A 28W 65 V
MRF5S4140HR3

MRF5S4140HR3

RF ULTRA HIGH FREQUENCY BAND, N-

Freescale Semiconductor

248 67.07
- +

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MRF5S4140HR3

Datenblatt

Bulk - Active LDMOS 465MHz 21dB 28 V - - 1.25 A 28W 65 V
MRF6S9130HSR3

MRF6S9130HSR3

RF ULTRA HIGH FREQUENCY BAND, N-

Freescale Semiconductor

3815 67.22
- +

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MRF6S9130HSR3

Datenblatt

Bulk - Active LDMOS 880MHz 19.2dB 28 V - - 950 mA 27W 68 V
BLF7G20LS-90P,112

BLF7G20LS-90P,112

RF PFET, 2-ELEMENT, L BAND, SILI

NXP USA Inc.

100 68.11
- +

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BLF7G20LS-90P,112

Datenblatt

Tube - Active LDMOS (Dual), Common Source 2.11GHz ~ 2.17GHz 19.5dB 28 V 2µA - 550 mA 90W 65 V
MWE6IC9100NBR1-FR

MWE6IC9100NBR1-FR

NARROW BAND HIGH POWER AMPLIFIER

Freescale Semiconductor

3000 68.43
- +

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MWE6IC9100NBR1-FR

Datenblatt

Bulk - Active LDMOS 869MHz ~ 960MHz 33.5dB 26 V 10µA - 120 mA 100W 66 V
CGH60060D-GP4

CGH60060D-GP4

RF MOSFET HEMT 28V DIE

Wolfspeed, Inc.

3781 107.67
- +

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CGH60060D-GP4

Datenblatt

Tray GaN Not For New Designs HEMT 6GHz 13dB 28 V - - 400 mA 60W 84 V
MRF7S21110HR3

MRF7S21110HR3

RF S BAND, N-CHANNEL

Freescale Semiconductor

3553 69.58
- +

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MRF7S21110HR3

Datenblatt

Bulk - Active LDMOS 2.17GHz 17.3dB 28 V - - 1.1 A 33W 65 V
MRF8S23120HR5

MRF8S23120HR5

POWER, N-CHANNEL, MOSFET

Freescale Semiconductor

195 71.88
- +

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MRF8S23120HR5

Datenblatt

Bulk - Obsolete LDMOS 2.3GHz 16dB 28 V - - 800 mA 28W 65 V
MRF8HP21130HSR3

MRF8HP21130HSR3

RF 2-ELEMENT, S BAND, N-CHANNEL

Freescale Semiconductor

2764 72.43
- +

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MRF8HP21130HSR3

Datenblatt

Bulk - Active LDMOS (Dual) 2.17GHz 14dB 28 V - - 360 mA 28W 65 V
CGH27030P

CGH27030P

30W, GAN HEMT, 28V, DC-6.0GHZ, P

Wolfspeed, Inc.

3168 118.24
- +

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CGH27030P

Datenblatt

Tray GaN Active HEMT 2.3GHz ~ 2.9GHz 14.5dB 28 V - - 150 mA 30W 84 V
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