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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
IXDF604SI

IXDF604SI

IC GATE DRVR LOW-SIDE 8SOIC

IXYS Integrated Circuits Division

2606 3.63
- +

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IXDF604SI

Datenblatt

Tube - Active Low-Side Independent 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 4A, 4A Inverting, Non-Inverting - 9ns, 8ns -40°C ~ 125°C (TA) Surface Mount
TC4424EPA

TC4424EPA

IC GATE DRVR LOW-SIDE 8DIP

Microchip Technology

3394 3.67
- +

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TC4424EPA

Datenblatt

Tube - Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 3A, 3A Non-Inverting - 23ns, 25ns -40°C ~ 150°C (TJ) Through Hole
TC4432COA

TC4432COA

IC GATE DRVR HI/LOW SIDE 8SOIC

Microchip Technology

190 3.70
- +

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TC4432COA

Datenblatt

Tube - Active High-Side or Low-Side Single 1 N-Channel, P-Channel MOSFET 4.5V ~ 30V 0.8V, 2.4V 1.5A, 1.5A Non-Inverting - 25ns, 33ns 0°C ~ 150°C (TJ) Surface Mount
IR21531PBF

IR21531PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

3734 3.77
- +

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IR21531PBF

Datenblatt

Tube - Not For New Designs Half-Bridge Synchronous 2 N-Channel MOSFET 10V ~ 15.6V - - RC Input Circuit 600 V 80ns, 45ns -40°C ~ 125°C (TJ) Through Hole
EL7222CSZ

EL7222CSZ

IC GATE DRVR LOW-SIDE 8SOIC

Renesas Electronics America Inc

2851 3.82
- +

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EL7222CSZ

Datenblatt

Tube - Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 15V 0.8V, 2.4V 2A, 2A Inverting, Non-Inverting - 7.5ns, 10ns -40°C ~ 125°C (TJ) Surface Mount
IR2302SPBF

IR2302SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

808 3.89
- +

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Demander

IR2302SPBF

Datenblatt

Tube - Active Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 5V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 130ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
ISL2101AABZ

ISL2101AABZ

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics America Inc

123 3.90
- +

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ISL2101AABZ

Datenblatt

Tube - Active Half-Bridge Independent 2 N-Channel MOSFET 9V ~ 14V 1.4V, 2.2V 2A, 2A Non-Inverting 114 V 10ns, 10ns -40°C ~ 125°C (TJ) Surface Mount
IRS2004PBF

IRS2004PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

3055 4.09
- +

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Demander

IRS2004PBF

Datenblatt

Tube - Active Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.5V 290mA, 600mA Non-Inverting 200 V 70ns, 35ns -40°C ~ 150°C (TJ) Through Hole
IR2112SPBF

IR2112SPBF

IC GATE DRVR HI/LOW SIDE 16SOIC

Infineon Technologies

3055 4.17
- +

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Demander

IR2112SPBF

Datenblatt

Bulk,Tube - Active High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 6V, 9.5V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Surface Mount
IR2104PBF

IR2104PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

2720 4.19
- +

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Demander

IR2104PBF

Datenblatt

Tube - Not For New Designs Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 210mA, 360mA Non-Inverting 600 V 100ns, 50ns -40°C ~ 150°C (TJ) Through Hole
IR2102SPBF

IR2102SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

2435 4.46
- +

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Demander

IR2102SPBF

Datenblatt

Tube - Active Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 210mA, 360mA Inverting 600 V 100ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IRS23364DSTRPBF

IRS23364DSTRPBF

IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon Technologies

2015 7.01
- +

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IRS23364DSTRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 11.5V ~ 20V 0.8V, 2.5V 200mA, 350mA Non-Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
MIC4468YWM

MIC4468YWM

IC GATE DRVR LOW-SIDE 16SOIC

Microchip Technology

420 5.10
- +

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Demander

MIC4468YWM

Datenblatt

Tube - Active Low-Side Independent 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.2A, 1.2A Non-Inverting - 14ns, 13ns -40°C ~ 85°C (TA) Surface Mount
IRS2110PBF

IRS2110PBF

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

397 5.41
- +

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Demander

IRS2110PBF

Datenblatt

Tube - Not For New Designs Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 6V, 9.5V 2.5A, 2.5A Non-Inverting 500 V 25ns, 17ns -40°C ~ 150°C (TJ) Through Hole
MAX4420ESA+

MAX4420ESA+

IC GATE DRVR LOW-SIDE 8SOIC

Analog Devices Inc./Maxim Integrated

200 5.51
- +

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Demander

MAX4420ESA+

Datenblatt

Tube - Active Low-Side Single 1 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 6A, 6A Non-Inverting - 25ns, 25ns -40°C ~ 85°C (TA) Surface Mount
IRS2453DPBF

IRS2453DPBF

IC GATE DRVR FULL-BRIDGE 14DIP

Infineon Technologies

211 5.52
- +

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Demander

IRS2453DPBF

Datenblatt

Tube - Active Full-Bridge Synchronous 1 N-Channel MOSFET 10V ~ 15.6V 4.7V, 9.3V 180mA, 260mA RC Input Circuit 600 V 120ns, 50ns -25°C ~ 125°C (TJ) Through Hole
MAX4426ESA+

MAX4426ESA+

IC GATE DRVR LOW-SIDE 8SOIC

Analog Devices Inc./Maxim Integrated

900 5.75
- +

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Demander

MAX4426ESA+

Datenblatt

Tube - Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.5A, 1.5A Inverting - 20ns, 20ns -40°C ~ 85°C (TA) Surface Mount
MAX627CSA+

MAX627CSA+

IC GATE DRVR LOW-SIDE 8SOIC

Analog Devices Inc./Maxim Integrated

315 5.86
- +

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Demander

MAX627CSA+

Datenblatt

Tube - Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 2A, 2A Non-Inverting - 25ns, 20ns 0°C ~ 70°C (TA) Surface Mount
IR2112PBF

IR2112PBF

IC GATE DRVR HI/LOW SIDE 14DIP

Infineon Technologies

2770 5.91
- +

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Demander

IR2112PBF

Datenblatt

Tube - Not For New Designs High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 6V, 9.5V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) Through Hole
ICL7667CPA+

ICL7667CPA+

IC GATE DRVR HALF-BRIDGE 8DIP

Analog Devices Inc./Maxim Integrated

227 5.91
- +

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Demander

ICL7667CPA+

Datenblatt

Tube - Active - Independent 2 N-Channel MOSFET 4.5V ~ 17V 0.8V, 2V - Inverting - 20ns, 20ns 0°C ~ 150°C (TJ) Through Hole
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