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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
PMEG6002EBF

PMEG6002EBF

DIODE SCHOTTKY 60V 200MA SOD523

Nexperia USA Inc.

3192 0.06
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PMEG6002EBF

Datenblatt

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 14pF @ 1V, 1MHz - 100 µA @ 60 V 60 V 200mA (DC) 150°C (Max) 600 mV @ 200 mA
SFT18G R0G

SFT18G R0G

DIODE GEN PURP 600V 1A TS-1

Taiwan Semiconductor Corporation

2376 0.10
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SFT18G R0G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
BYG10J-M3/TR3

BYG10J-M3/TR3

DIODE AVALANCHE 600V 1.5A

Vishay General Semiconductor - Diodes Division

2302 0.15
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BYG10J-M3/TR3

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount - 4 µs 1 µA @ 600 V 600 V 1.5A -55°C ~ 150°C 1.15 V @ 1.5 A
1N5406G-T

1N5406G-T

DIODE GEN PURP 600V 3A DO201AD

Diodes Incorporated

2382 0.12
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1N5406G-T

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 4V, 1MHz 2 µs 5 µA @ 600 V 600 V 3A -65°C ~ 150°C 1.1 V @ 3 A
S2KHE3_A/H

S2KHE3_A/H

DIODE GEN PURP 800V 1.5A DO214AA

Vishay General Semiconductor - Diodes Division

3006 0.12
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S2KHE3_A/H

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 16pF @ 4V, 1MHz 2 µs 1 µA @ 800 V 800 V 1.5A -55°C ~ 150°C 1.15 V @ 1.5 A
BAS382-TR3

BAS382-TR3

DIODE SCHOTTKY 50V 30MA MICROMLF

Vishay General Semiconductor - Diodes Division

3882 0.06
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BAS382-TR3

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 1.6pF @ 1V, 1MHz - 200 nA @ 50 V 50 V 30mA 125°C (Max) 1 V @ 15 mA
PMEG3010AESAYL

PMEG3010AESAYL

DIODE SCHOTTKY 30V 1A DSN1006U-2

Nexperia USA Inc.

2391 0.06
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PMEG3010AESAYL

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 32pF @ 10V, 1MHz 3.5 ns 1.25 mA @ 30 V 30 V 1A 150°C (Max) 480 mV @ 1 A
US1JHM3_A/H

US1JHM3_A/H

1A 600V SM ULTRAFAST RECT SMA

Vishay General Semiconductor - Diodes Division

2312 0.10
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US1JHM3_A/H

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 75 ns 10 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
BYG10K-M3/TR3

BYG10K-M3/TR3

DIODE AVALANCHE 800V 1.5A

Vishay General Semiconductor - Diodes Division

2385 0.15
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BYG10K-M3/TR3

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount - 4 µs 1 µA @ 800 V 800 V 1.5A -55°C ~ 150°C 1.15 V @ 1.5 A
SURA8130T3G-VF01

SURA8130T3G-VF01

DIODE GEN PURP 300V 1A SMA

onsemi

2990 0.12
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SURA8130T3G-VF01

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 65 ns 5 µA @ 400 V 400 V 2A -65°C ~ 175°C 1.1 V @ 1 A
RBR1MM30ATR

RBR1MM30ATR

DIODE SCHOTTKY 30V 1A PMDU

Rohm Semiconductor

3793 0.00
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RBR1MM30ATR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 30 V 30 V 1A 150°C (Max) 480 mV @ 1 A
BAS85-M-18

BAS85-M-18

DIODE SCHOTTKY 30V 200MA SOD80

Vishay General Semiconductor - Diodes Division

3994 0.06
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BAS85-M-18

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 10pF @ 1V, 1MHz - 2 µA @ 25 V 30 V 200mA 125°C (Max) 800 mV @ 100 mA
SD101CW RHG

SD101CW RHG

DIODE SCHOTTKY 40V 15MA SOD123

Taiwan Semiconductor Corporation

2593 0.06
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SD101CW RHG

Datenblatt

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 2.2pF @ 0V, 1MHz 1 ns 200 nA @ 40 V 40 V 15mA (DC) -65°C ~ 125°C 900 mV @ 15 mA
US1JHM3_A/I

US1JHM3_A/I

1A 600V SM ULTRAFAST RECT SMA

Vishay General Semiconductor - Diodes Division

2983 0.10
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US1JHM3_A/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 75 ns 10 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
BYG10D-M3/TR

BYG10D-M3/TR

DIODE AVALANCHE 200V 1.5A

Vishay General Semiconductor - Diodes Division

3134 0.15
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BYG10D-M3/TR

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount - 4 µs 1 µA @ 200 V 200 V 1.5A -55°C ~ 150°C 1.15 V @ 1.5 A
RBR2MM40BTR

RBR2MM40BTR

DIODE SCHOTTKY 40V 2A PMDU

Rohm Semiconductor

2721 0.00
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RBR2MM40BTR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 80 µA @ 40 V 40 V 2A 150°C (Max) 560 mV @ 2 A
NRVHPRS1AFA

NRVHPRS1AFA

SR SOD123FA PN 0.8A 50V

onsemi

2204 0.12
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NRVHPRS1AFA

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 800mA -55°C ~ 150°C 1.3 V @ 800 mA
LS101A-GS18

LS101A-GS18

DIODE SCHOTTKY 60V 30MA SOD80

Vishay General Semiconductor - Diodes Division

2856 0.06
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LS101A-GS18

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 2pF @ 0V, 1MHz - 200 nA @ 50 V 60 V 30mA 125°C (Max) 1 V @ 15 mA
SD103AW RHG

SD103AW RHG

DIODE SCHOTTKY 40V 350MA SOD123

Taiwan Semiconductor Corporation

3667 0.06
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SD103AW RHG

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 50pF @ 0V, 1MHz - 5 µA @ 40 V 40 V 350mA 125°C (Max) 600 mV @ 200 mA
SF14GHR0G

SF14GHR0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

3767 0.10
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SF14GHR0G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 950 mV @ 1 A
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