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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
UH1PB-M3/84A

UH1PB-M3/84A

DIODE GEN PURP 100V 2.5A DO220AA

Vishay General Semiconductor - Diodes Division

3810 0.10
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UH1PB-M3/84A

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 16pF @ 4V, 1MHz 40 ns 5 µA @ 100 V 100 V 2.5A -55°C ~ 175°C 1.05 V @ 3 A
NTE6004

NTE6004

R-1600V 40A CATH CASE

NTE Electronics, Inc

3572 18.63
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NTE6004

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 9 mA @ 1600 V 1600 V 40A -65°C ~ 190°C 1.3 V @ 40 A
ES1DV M2G

ES1DV M2G

DIODE GEN PURP 200V 1A DO214AC

Taiwan Semiconductor Corporation

3518 0.09
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ES1DV M2G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 17pF @ 4V, 1MHz 15 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 920 mV @ 1 A
S5KC-HF

S5KC-HF

RECTIFIER GEN PURP 800V 5A SMC

Comchip Technology

2158 0.12
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 5A -55°C ~ 150°C 1 V @ 5 A
BAS19-HE3-08

BAS19-HE3-08

DIODE GEN PURP 100V 200MA SOT23

Vishay General Semiconductor - Diodes Division

2239 0.03
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BAS19-HE3-08

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 100 V 100 V 200mA -55°C ~ 150°C 1.25 V @ 200 mA
UH1PC-M3/84A

UH1PC-M3/84A

DIODE GEN PURP 150V 1A DO220AA

Vishay General Semiconductor - Diodes Division

2722 0.10
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UH1PC-M3/84A

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 16pF @ 4V, 1MHz 40 ns 1 µA @ 200 V 150 V 1A -55°C ~ 175°C 1.05 V @ 1 A
GC05MPS33J

GC05MPS33J

3300V 5A TO-263-7 SIC SCHOTTKY M

GeneSiC Semiconductor

2890 19.22
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Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount - 0 ns - 3300 V 5A (DC) 175°C -
ES2A-LTP

ES2A-LTP

DIODE GEN PURP 50V 2A DO214AC

Micro Commercial Co

2284 0.45
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ES2A-LTP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 2A -65°C ~ 175°C 950 mV @ 2 A
S5AC-HF

S5AC-HF

RECTIFIER GEN PURP 50V 5A SMC

Comchip Technology

2753 0.12
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 5A -55°C ~ 150°C 1 V @ 5 A
BAS20-HE3-08

BAS20-HE3-08

DIODE GEN PURP 150V 200MA SOT23

Vishay General Semiconductor - Diodes Division

2910 0.03
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BAS20-HE3-08

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 150 V 150 V 200mA -55°C ~ 150°C 1.25 V @ 200 mA
SF18G R0G

SF18G R0G

DIODE GEN PURP 600V 1A DO204AL

Taiwan Semiconductor Corporation

2290 0.10
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SF18G R0G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 35 ns 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.7 V @ 1 A
NTE6033

NTE6033

R-1KV PRV 40A FAST REC AK

NTE Electronics, Inc

3919 19.66
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NTE6033

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - 1 µs 100 µA @ 1000 V 1000 V 40A -40°C ~ 125°C 1.95 V @ 125 A
ES2B-LTP

ES2B-LTP

DIODE GEN PURP 100V 2A DO214AC

Micro Commercial Co

2722 0.45
- +

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ES2B-LTP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 2A -65°C ~ 175°C 950 mV @ 2 A
S5JC-HF

S5JC-HF

RECTIFIER GEN PURP 600V 5A SMC

Comchip Technology

2739 0.12
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 5A -55°C ~ 150°C 1 V @ 5 A
BAS116LYL

BAS116LYL

DIODE GEN PURP 75V 325MA 2DFN

Nexperia USA Inc.

3529 0.03
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BAS116LYL

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 2pF @ 0V, 1MHz 3 µs 5 nA @ 75 V 75 V 325mA (DC) 150°C (Max) 1.25 V @ 150 mA
SK315BHM4G

SK315BHM4G

DIODE SCHOTTKY 150V 3A DO214AA

Taiwan Semiconductor Corporation

3429 0.12
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SK315BHM4G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 150 V 150 V 3A -55°C ~ 150°C 950 mV @ 3 A
SS215 M4G

SS215 M4G

DIODE SCHOTTKY 150V 2A DO214AA

Taiwan Semiconductor Corporation

2557 0.10
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SS215 M4G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 150 V 150 V 2A -55°C ~ 150°C 950 mV @ 2 A
C4D20120A

C4D20120A

DIODE SCHOTTKY 1.2KV 20A TO220-2

Wolfspeed, Inc.

2499 21.71
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C4D20120A

Datenblatt

Tube Z-Rec® RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1500pF @ 0V, 1MHz 0 ns 200 µA @ 1200 V 1200 V 54.5A (DC) -55°C ~ 175°C 1.8 V @ 20 A
ES2D-LTP

ES2D-LTP

DIODE GEN PURP 200V 2A DO214AC

Micro Commercial Co

2825 0.45
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ES2D-LTP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 2A -65°C ~ 175°C 950 mV @ 2 A
US2FA

US2FA

DIODE GEN PURP 300V 1.5A SMA

onsemi

2626 0.12
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US2FA

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 50 ns 5 µA @ 300 V 300 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
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