Diodes-Rectifiers-Single - Élément Technology Co., Ltd.

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Le fabricant#	Stocks	Prix	Quantité	Tableau	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
STTH806G-TR DIODE GEN PURP 600V 8A D2PAK STMicroelectronics	2804	2.30	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	55 ns	8 µA @ 600 V	600 V	8A	175°C (Max)	1.85 V @ 8 A
IDH08G65C5XKSA2 DIODE SCHOTTKY 650V 8A TO220-2-1 Infineon Technologies	2063	4.11	- + Ajouter au panier Demander	Datenblatt	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	250pF @ 1V, 1MHz	0 ns	140 µA @ 650 V	650 V	8A (DC)	-55°C ~ 175°C	1.7 V @ 8 A
S2MGF_R1_00001 SURFACE MOUNT RECTIFIER Panjit International Inc.	3907	0.45	- + Ajouter au panier Demander		Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	18pF @ 4V, 1MHz	-	1 µA @ 1000 V	1000 V	2A	-55°C ~ 150°C	1.1 V @ 2 A
ES1JLW RVG DIODE GEN PURP 600V 1A SOD123W Taiwan Semiconductor Corporation	3343	0.47	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	20pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 175°C	1.7 V @ 1 A
BYG10Y-M3/TR DIODE AVALANCHE 1.6KV 1.5A Vishay General Semiconductor - Diodes Division	2440	0.51	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Surface Mount	-	4 µs	1 µA @ 1600 V	1600 V	1.5A	-55°C ~ 150°C	1.15 V @ 1.5 A
GI250-4-E3/54 DIODE GEN PURP 4KV 250MA DO204 Vishay General Semiconductor - Diodes Division	2994	0.61	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	SUPERECTIFIER®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	3pF @ 4V, 1MHz	2 µs	5 µA @ 4000 V	4000 V	250mA	-65°C ~ 175°C	3.5 V @ 250 mA
VS-ETH0806FP-M3 DIODE GEN PURP 600V 8A TO220-2 Vishay General Semiconductor - Diodes Division	2940	1.25	- + Ajouter au panier Demander	Datenblatt	Bulk	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	21 ns	12 µA @ 600 V	600 V	8A	-65°C ~ 175°C	2.65 V @ 8 A
STPSC10H065D DIODE SCHOTTKY 650V 10A TO220AC STMicroelectronics	3720	4.15	- + Ajouter au panier Demander	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	480pF @ 0V, 1MHz	0 ns	100 µA @ 650 V	650 V	10A	-40°C ~ 175°C	1.75 V @ 10 A
PMEG100T10ELRX PMEG100T10ELR/SOD123W/SOD2 Nexperia USA Inc.	3779	0.43	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	125pF @ 1V, 1MHz	11.5 ns	900 nA @ 100 V	100 V	1A	175°C	750 mV @ 1 A
SS315LW RVG DIODE SCHOTTKY 150V 3A SOD123W Taiwan Semiconductor Corporation	2085	0.47	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	10 µA @ 150 V	150 V	3A	-55°C ~ 150°C	950 mV @ 3 A
VSSB410S-M3/52T DIODE SCHOTTKY 100V 1.9A DO214AA Vishay General Semiconductor - Diodes Division	3733	0.49	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	230pF @ 4V, 1MHz	-	250 µA @ 100 V	100 V	1.9A (DC)	-40°C ~ 150°C	770 mV @ 4 A
RS3MB-T R5G 150NS 3A 1000V FAST RECOVERY REC Taiwan Semiconductor Corporation	3331	0.51	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	50pF @ 4V, 1MHz	500 ns	5 µA @ 1000 V	1000 V	3A (DC)	-55°C ~ 150°C	1.3 V @ 3 A
STPSC4H065DLF SILICON CARBIDE DIODES STMicroelectronics	3456	2.32	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	ECOPACK®2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	245pF @ 0V, 1MHz	0 ns	40 µA @ 650 V	650 V	4A	-40°C ~ 175°C	1.55 V @ 4 A
STTH3010WY DIODE GEN PURP 1KV 30A DO247-2 STMicroelectronics	3285	4.21	- + Ajouter au panier Demander	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	100 ns	15 µA @ 1000 V	1000 V	30A	-40°C ~ 175°C	2 V @ 30 A
ES1CWG_R1_00001 SURFACE MOUNT SUPER FAST RECOVER Panjit International Inc.	2056	0.45	- + Ajouter au panier Demander		Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	35 ns	1 µA @ 150 V	150 V	1A	-55°C ~ 150°C	950 mV @ 1 A
NRVBA340NT3G DIODE SCHOTTKY 3A 40V 1201 SMA2 onsemi	2426	0.44	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	300 µA @ 40 V	40 V	3A	-55°C ~ 150°C	450 mV @ 3 A
S5JHE3_A/I DIODE GEN PURP 600V 5A DO214AB Vishay General Semiconductor - Diodes Division	3962	0.58	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	40pF @ 4V, 1MHz	2.5 µs	10 µA @ 600 V	600 V	5A	-55°C ~ 150°C	1.15 V @ 5 A
STPS340S DIODE SCHOTTKY 40V 3A SMC STMicroelectronics	2534	0.58	- + Ajouter au panier Demander	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	20 µA @ 40 V	40 V	3A	150°C (Max)	630 mV @ 3 A
VS-15ETH03S-M3 DIODE GEN PURP 300V 15A TO263AB Vishay General Semiconductor - Diodes Division	2782	1.27	- + Ajouter au panier Demander	Datenblatt	Tube	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	40 ns	40 µA @ 300 V	300 V	15A	-65°C ~ 175°C	1.25 V @ 15 A
SCS220AEGC11 650V, 20A, 3-PIN THD, SILICON-CA Rohm Semiconductor	2310	4.42	- + Ajouter au panier Demander	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	730pF @ 1V, 1MHz	0 ns	400 µA @ 600 V	650 V	20A (DC)	175°C	1.55 V @ 20 A

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