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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
NTE6162

NTE6162

R-1400PRV 150A CATH CASE

NTE Electronics, Inc

3738 61.88
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NTE6162

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 5 mA @ 1400 V 1400 V 150A -65°C ~ 190°C 1.1 V @ 200 A
RF1501NS3STL

RF1501NS3STL

DIODE GEN PURP 300V 20A LPDS

Rohm Semiconductor

1065 1.74
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RF1501NS3STL

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 10 µA @ 300 V 300 V 20A 150°C (Max) 1.5 V @ 20 A
V12PM15-M3/H

V12PM15-M3/H

DIODE SCHOTTKY TMBS 12A 150V SMP

Vishay General Semiconductor - Diodes Division

291 0.78
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V12PM15-M3/H

Datenblatt

Tape & Reel (TR),Cut Tape (CT) eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 860pF @ 4V, 1MHz - 250 µA @ 150 V 150 V 12A -40°C ~ 175°C 1.08 V @ 12 A
LSIC2SD065D16A

LSIC2SD065D16A

DIODE SCHOTTKY SIC 650V 16A

Littelfuse Inc.

825 8.84
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LSIC2SD065D16A

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, GEN2 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 730pF @ 1V, 1MHz 0 ns 50 µA @ 650 V 650 V 38A (DC) -55°C ~ 175°C 1.8 V @ 16 A
1N645

1N645

DIODE 4 AMP 225V DO35

Solid State Inc.

3289 1.89
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1N645

Datenblatt

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 200 nA @ 225 V 225 V 400mA -65°C ~ 175°C 1 V @ 400 mA
NTE6163

NTE6163

R-1400PRV 150A ANODE CASE

NTE Electronics, Inc

3928 61.88
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NTE6163

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 5 mA @ 1400 V 1400 V 150A -65°C ~ 190°C 1.1 V @ 200 A
FFPF15S60STU

FFPF15S60STU

DIODE GEN PURP 600V 15A TO220F

onsemi

680 1.75
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FFPF15S60STU

Datenblatt

Tube Stealth™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Last Time Buy Through Hole - 35 ns 100 µA @ 600 V 600 V 15A -65°C ~ 150°C 2.6 V @ 15 A
BYV27-150-TR

BYV27-150-TR

DIODE AVALANCHE 165V 2A SOD57

Vishay General Semiconductor - Diodes Division

975 0.79
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BYV27-150-TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 25 ns 1 µA @ 165 V 165 V 2A -55°C ~ 175°C 1.07 V @ 3 A
WNSC101200Q

WNSC101200Q

SILICON CARBIDE POWER DIODE

WeEn Semiconductors

2435 8.93
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WNSC101200Q

Datenblatt

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 510pF @ 1V, 1MHz 0 ns 110 µA @ 1200 V 1200 V 10A 175°C (Max) 1.6 V @ 10 A
UJ3D06504TS

UJ3D06504TS

650V 4A SIC SCHOTTKY DIODE G3, T

UnitedSiC

993 2.27
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UJ3D06504TS

Datenblatt

Tube Gen-III RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 118pF @ 1V, 1MHz 0 ns 25 µA @ 650 V 650 V 4A (DC) -55°C ~ 175°C 1.7 V @ 4 A
NTE6354

NTE6354

R-400 PRV 300 A CATH CASE

NTE Electronics, Inc

3370 61.95
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NTE6354

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 40 mA @ 400 V 400 V 300A -40°C ~ 180°C -
STPS1545DY

STPS1545DY

DIODE SCHOTTKY 45V 15A TO220AC

STMicroelectronics

1305 1.75
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STPS1545DY

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 200 µA @ 45 V 45 V 15A -40°C ~ 175°C 570 mV @ 15 A
FML-G22S

FML-G22S

DIODE GEN PURP 200V 10A TO220F

Sanken

352 0.79
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FML-G22S

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 40 ns 200 µA @ 200 V 200 V 10A -40°C ~ 150°C 980 mV @ 10 A
WNSC101200WQ

WNSC101200WQ

SILICON CARBIDE POWER DIODE

WeEn Semiconductors

1200 8.93
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WNSC101200WQ

Datenblatt

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 510pF @ 1V, 1MHz 0 ns 110 µA @ 1200 V 1200 V 10A 175°C (Max) 1.6 V @ 10 A
GP3D006A065A

GP3D006A065A

DIODE SILICON CARBIDE

SemiQ

476 1.98
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GP3D006A065A

Datenblatt

Tube Amp+™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 229pF @ 1V, 1MHz - 15 µA @ 650 V 650 V 20A (DC) -55°C ~ 175°C 1.55 V @ 6 A
1N4004GP-TP

1N4004GP-TP

DIODE GEN PURP 400V 1A DO41

Micro Commercial Co

108 0.29
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1N4004GP-TP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 2 µs 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.1 V @ 1 A
SDUR15Q60WTB

SDUR15Q60WTB

600V FRD,15A,PACKAGE TO-247AC

SMC Diode Solutions

3000 1.78
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SDUR15Q60WTB

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 20 µA @ 600 V 600 V 15A -55°C ~ 150°C 2 V @ 15 A
CMR1U-01 TR13 PBFREE

CMR1U-01 TR13 PBFREE

DIODE GEN PURP 100V 1A SMB

Central Semiconductor Corp

315 0.79
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CMR1U-01 TR13 PBFREE

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -65°C ~ 175°C 1 V @ 1 A
VS-1N1183A

VS-1N1183A

DIODE GEN PURP 50V 40A DO203AB

Vishay General Semiconductor - Diodes Division

294 8.93
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VS-1N1183A

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 2.5 mA @ 50 V 50 V 40A -65°C ~ 200°C 1.3 V @ 126 A
S4D02120A

S4D02120A

DIODE SCHOTTKY SILICON CARBIDE S

SMC Diode Solutions

298 1.99
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Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 116pF @ 0V, 1MHz 0 ns 10 µA @ 1200 V 1200 V 2A -55°C ~ 175°C 1.8 V @ 2 A
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