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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
NTE6071

NTE6071

R-1600V 85A ANODE CASE

NTE Electronics, Inc

3535 29.65
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NTE6071

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 2 mA @ 1600 V 1600 V 85A -65°C ~ 190°C 1.15 V @ 200 A
V30100S-M3/4W

V30100S-M3/4W

DIODE SCHOTTKY 30A 100V TO-220AB

Vishay General Semiconductor - Diodes Division

992 1.73
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V30100S-M3/4W

Datenblatt

Tube TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 350 µA @ 100 V 100 V 30A -40°C ~ 150°C 1 V @ 30 A
HS5G V7G

HS5G V7G

DIODE GEN PURP 400V 5A DO214AB

Taiwan Semiconductor Corporation

1550 1.48
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HS5G V7G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 80pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 5A -55°C ~ 150°C 1.3 V @ 5 A
V10PM45HM3/H

V10PM45HM3/H

DIODE SCHOTTKY TMBS 10A 45V SMPC

Vishay General Semiconductor - Diodes Division

239 0.74
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V10PM45HM3/H

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1850pF @ 4V, 1MHz - 300 µA @ 45 V 45 V 10A -40°C ~ 175°C 600 mV @ 10 A
CDBJFSC10650-G

CDBJFSC10650-G

DIODE, SIC STKY 10A 650V TO-220F

Comchip Technology

494 6.10
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CDBJFSC10650-G

Datenblatt

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 710pF @ 0V, 1MHz 0 ns 100 µA @ 650 V 650 V 10A (DC) -55°C ~ 175°C 1.7 V @ 10 A
IDV15E65D2XKSA1

IDV15E65D2XKSA1

DIODE GEN PURP 650V 15A TO220-2

Infineon Technologies

490 1.30
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IDV15E65D2XKSA1

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 47 ns 40 µA @ 650 V 650 V 15A -40°C ~ 175°C 2.2 V @ 15 A
SM165KE800G2

SM165KE800G2

DIODE RECTIFIER 800V 165A SINGLE

SMC Diode Solutions

3837 32.81
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Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis Mount - - 20 µA @ 800 V 800 V 165A -40°C ~ 150°C 1.25 V @ 165 A
STTH2002DI

STTH2002DI

DIODE GEN PURP 200V 20A TO220AC

STMicroelectronics

520 1.73
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STTH2002DI

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 10 µA @ 200 V 200 V 20A 175°C (Max) 1.1 V @ 20 A
HS5K V7G

HS5K V7G

DIODE GEN PURP 800V 5A DO214AB

Taiwan Semiconductor Corporation

1428 1.48
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HS5K V7G

Datenblatt

Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 50pF @ 4V, 1MHz 75 ns 10 µA @ 800 V 800 V 5A -55°C ~ 150°C 1.7 V @ 5 A
SB560

SB560

DIODE SCHOTTKY 60V 5A DO201AD

onsemi

2561 0.74
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SB560

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Last Time Buy Through Hole 380pF @ 4V, 1MHz - 500 µA @ 60 V 60 V 5A -55°C ~ 150°C 670 mV @ 5 A
LSIC2SD120A10

LSIC2SD120A10

DIODE SCHOTTKY 1.2KV 28A TO220-2

Littelfuse Inc.

383 6.28
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LSIC2SD120A10

Datenblatt

Tube Gen2 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Obsolete Through Hole 582pF @ 1V, 1MHz 0 ns 100 µA @ 1200 V 1200 V 28A (DC) -55°C ~ 175°C 1.8 V @ 10 A
1N60A

1N60A

D-GE 40PRV .005A

NTE Electronics, Inc

695 1.31
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1N60A

Datenblatt

Bag RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole - - 65 µA @ 10 V 30 V 150mA (DC) -65°C ~ 85°C 1 V @ 5 mA
PEF20470HV1.1

PEF20470HV1.1

SWITI MTSI-L SWITCHING IC

Rochester Electronics, LLC

2609 33.77
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Bulk RoHS - - Active - - - - - - - -
MBR10100-E3/4W

MBR10100-E3/4W

DIODE SCHOTTKY 100V 10A TO220AC

Vishay General Semiconductor - Diodes Division

735 1.76
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MBR10100-E3/4W

Datenblatt

Tube TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 10A -65°C ~ 150°C 800 mV @ 10 A
HS5J V7G

HS5J V7G

DIODE GEN PURP 600V 5A DO214AB

Taiwan Semiconductor Corporation

1363 1.48
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HS5J V7G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 50pF @ 4V, 1MHz 75 ns 10 µA @ 600 V 600 V 5A -55°C ~ 150°C 1.7 V @ 5 A
TST10L60CW C0G

TST10L60CW C0G

DIODE SCHOTTKY 60V 5A TO220AB

Taiwan Semiconductor Corporation

924 0.75
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TST10L60CW C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 200 µA @ 60 V 60 V 5A -55°C ~ 150°C 650 mV @ 5 A
LSIC2SD065A10A

LSIC2SD065A10A

SIC SCHOTTKY DIOD 650V 10A TO220

Littelfuse Inc.

1018 6.34
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LSIC2SD065A10A

Datenblatt

Tube Gen2 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 470pF @ 1V, 1MHz 0 ns 50 µA @ 650 V 650 V 27A (DC) -55°C ~ 175°C 1.8 V @ 10 A
DSB10I45PM

DSB10I45PM

DIODE SCHOTTKY 45V 10A TO220FP

IXYS

400 1.35
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DSB10I45PM

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 7 mA @ 45 V 45 V 10A -55°C ~ 150°C 560 mV @ 10 A
NTE6047

NTE6047

R-1KV PRV 85A FAST REC AK

NTE Electronics, Inc

2460 35.49
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NTE6047

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - 1 µs 100 µA @ 1000 V 1000 V 85A -40°C ~ 125°C 1.75 V @ 267 A
SCS304AMC

SCS304AMC

DIODES SILICON CARBIDE

Rohm Semiconductor

573 1.76
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SCS304AMC

Datenblatt

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 200pF @ 1V, 1MHz 0 ns 20 µA @ 650 V 650 V 4A (DC) 175°C (Max) 1.5 V @ 4 A
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