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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
VS-96-1050-N3

VS-96-1050-N3

DIODE GP 90A TO247

Vishay General Semiconductor - Diodes Division

2309 0.00
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Tube RoHS - - Active - - - - - - - -
HER302G A0G

HER302G A0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

3312 0.00
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HER302G A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 3A -55°C ~ 150°C 1 V @ 3 A
VS-E4PH6006L-N-S1

VS-E4PH6006L-N-S1

DIODE 60A 600V TO220AD-2

Vishay General Semiconductor - Diodes Division

3632 0.00
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Tube RoHS - - Obsolete - - - - - - - -
HER303G A0G

HER303G A0G

DIODE GEN PURP 200V 3A DO201AD

Taiwan Semiconductor Corporation

2225 0.00
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HER303G A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 3A -55°C ~ 150°C 1 V @ 3 A
VS-80-1320PBF

VS-80-1320PBF

DIODE GP 80A TO247

Vishay General Semiconductor - Diodes Division

2227 0.00
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Tube RoHS - - Obsolete - - - - - - - -
HER304G A0G

HER304G A0G

DIODE GEN PURP 300V 3A DO201AD

Taiwan Semiconductor Corporation

2462 0.00
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HER304G A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 3A -55°C ~ 150°C 1 V @ 3 A
VS-S1558

VS-S1558

DIODE GEN PURP TO214

Vishay General Semiconductor - Diodes Division

3631 0.00
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Tube RoHS - - Obsolete - - - - - - - -
HER306G A0G

HER306G A0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

2766 0.00
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HER306G A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 75 ns 10 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.7 V @ 3 A
VS-80-1320-M3

VS-80-1320-M3

DIODE GP 80A TO247

Vishay General Semiconductor - Diodes Division

2938 0.00
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Tube RoHS - - Active - - - - - - - -
HER307G A0G

HER307G A0G

DIODE GEN PURP 800V 3A DO201AD

Taiwan Semiconductor Corporation

2391 0.00
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HER307G A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 4V, 1MHz 75 ns 10 µA @ 800 V 800 V 3A -55°C ~ 150°C 1.7 V @ 3 A
VS-E4PU6006L-N-S1

VS-E4PU6006L-N-S1

DIODE 60A 600V TO247AD-2

Vishay General Semiconductor - Diodes Division

3140 0.00
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Tube RoHS - - Obsolete - - - - - - - -
HER601G A0G

HER601G A0G

DIODE GEN PURP 50V 6A R-6

Taiwan Semiconductor Corporation

2526 0.00
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HER601G A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 6A -55°C ~ 150°C 1 V @ 6 A
IDP45E60XKSA2

IDP45E60XKSA2

IC IDP45E60 TO220-2

Infineon Technologies

3213 0.00
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Tube RoHS - - Obsolete - - - - - - - -
HER602G A0G

HER602G A0G

DIODE GEN PURP 100V 6A R-6

Taiwan Semiconductor Corporation

2486 0.00
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HER602G A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 6A -55°C ~ 150°C 1 V @ 6 A
SIDC88D65DC8AX7SA2

SIDC88D65DC8AX7SA2

DIODE GENERAL PURPOSE 650V

Infineon Technologies

2791 0.00
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Bulk RoHS - - Obsolete - - - - - - - -
HER603G A0G

HER603G A0G

DIODE GEN PURP 200V 6A R-6

Taiwan Semiconductor Corporation

2498 0.00
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HER603G A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 200 V 200 V 6A -55°C ~ 150°C 1 V @ 6 A
SIDC14D60E6X7SA1

SIDC14D60E6X7SA1

DIODE SWITCHING 600V WAFER

Infineon Technologies

2117 0.00
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Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount - - 27 µA @ 600 V 600 V 30A (DC) -55°C ~ 150°C 1.25 V @ 30 A
HER604G A0G

HER604G A0G

DIODE GEN PURP 300V 6A R-6

Taiwan Semiconductor Corporation

3089 0.00
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HER604G A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 6A -55°C ~ 150°C 1 V @ 6 A
SIDC08D60C8X1SA3

SIDC08D60C8X1SA3

DIODE GEN PURP 600V 30A WAFER

Infineon Technologies

3093 0.00
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SIDC08D60C8X1SA3

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 27 µA @ 600 V 600 V 30A (DC) -40°C ~ 175°C 1.95 V @ 30 A
HER605G A0G

HER605G A0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation

2199 0.00
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HER605G A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 6A -55°C ~ 150°C 1.3 V @ 6 A
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