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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
MUR4L20HR0G

MUR4L20HR0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation

3783 0.27
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MUR4L20HR0G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 4A -55°C ~ 175°C 890 mV @ 4 A
1N5551C.TR

1N5551C.TR

DIODE GEN PURP 400V 3A AXIAL

Semtech Corporation

2726 4.50
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1N5551C.TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 92pF @ 5V, 1MHz 2 µs 1 µA @ 400 V 400 V 5A - 1 V @ 3 A
MUR4L40HR0G

MUR4L40HR0G

DIODE GEN PURP 400V 4A DO201AD

Taiwan Semiconductor Corporation

2280 0.27
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MUR4L40HR0G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 400 V 400 V 4A -55°C ~ 175°C 1.28 V @ 4 A
1N5550C.TR

1N5550C.TR

DIODE GEN PURP 200V 5A AXIAL

Semtech Corporation

3221 4.50
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1N5550C.TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 92pF @ 5V, 1MHz 2 µs 1 µA @ 200 V 200 V 5A - 1 V @ 3 A
MUR4L60HR0G

MUR4L60HR0G

DIODE GEN PURP 600V 4A DO201AD

Taiwan Semiconductor Corporation

3266 0.27
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MUR4L60HR0G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 65pF @ 4V, 1MHz 50 ns 10 µA @ 600 V 600 V 4A -55°C ~ 175°C 1.28 V @ 4 A
DNA30E2200PZ-TUB

DNA30E2200PZ-TUB

POWER DIODE DISCRETES-RECTIFIER

IXYS

2667 4.50
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DNA30E2200PZ-TUB

Datenblatt

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 7pF @ 700V, 1MHz - 40 µA @ 2200 V 2200 V 30A -55°C ~ 175°C 1.26 V @ 30 A
SDT8A120P5-7

SDT8A120P5-7

DIODE SCHOTTKY 120V 8A POWERDI 5

Diodes Incorporated

3538 0.28
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SDT8A120P5-7

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 300 µA @ 120 V 120 V 8A - 840 mV @ 8 A
BYC100W-1200PQ

BYC100W-1200PQ

BYC100W-1200P/TO247-2L/STANDARD

WeEn Semiconductors

3688 4.52
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BYC100W-1200PQ

Datenblatt

Tube EEPP™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 90 ns 250 µA @ 1200 V 1200 V 100A 175°C (Max) 3.3 V @ 100 A
SDT8A120P5-7D

SDT8A120P5-7D

SCHOTTKY RECTIFIER PDI5

Diodes Incorporated

3825 0.28
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SDT8A120P5-7D

Datenblatt

Tape & Reel (TR) RoHS - - Active - - - - - - - -
GC05MPS12-220

GC05MPS12-220

SIC DIODE 1200V 5A TO-220-2

GeneSiC Semiconductor

2061 4.52
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GC05MPS12-220

Datenblatt

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Not For New Designs Through Hole 359pF @ 1V, 1MHz 0 ns 4 µA @ 1200 V 1200 V 29A (DC) -55°C ~ 175°C 1.8 V @ 5 A
S5KB R5G

S5KB R5G

DIODE GEN PURP 800V 5A DO214AA

Taiwan Semiconductor Corporation

2833 0.55
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S5KB R5G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 40pF @ 4V, 1MHz - 10 µA @ 800 V 800 V 5A -55°C ~ 150°C 1.1 V @ 5 A
JANTX1N4246/TR

JANTX1N4246/TR

RECTIFIER UFR,FRR

Microchip Technology

2832 4.53
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Tape & Reel (TR) Military, MIL-PRF-19500/286 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 5 µs 1 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.3 V @ 3 A
SS3H9HE3_B/I

SS3H9HE3_B/I

DIODE SCHOTTKY 90V 3A DO214AB

Vishay General Semiconductor - Diodes Division

3974 0.28
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SS3H9HE3_B/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q100 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 20 µA @ 90 V 90 V 3A -65°C ~ 175°C 800 mV @ 3 A
DMA30P1600HB

DMA30P1600HB

POWER DIODE DISCRETES-RECTIFIER

IXYS

3376 4.53
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DMA30P1600HB

Datenblatt

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 11pF @ 400V, 1MHz - 40 µA @ 1600 V 1600 V 30A -55°C ~ 175°C 1.26 V @ 30 A
S12MCHR7G

S12MCHR7G

DIODE GEN PURP 1KV 12A DO214AB

Taiwan Semiconductor Corporation

2958 0.28
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S12MCHR7G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 78pF @ 4V, 1MHz - 1 µA @ 1000 V 1000 V 12A -55°C ~ 150°C 1.1 V @ 12 A
VS-16FLR20S02

VS-16FLR20S02

DIODE GEN PURP 200V 16A DO203AA

Vishay General Semiconductor - Diodes Division

2660 4.53
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VS-16FLR20S02

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 200 ns 50 µA @ 200 V 200 V 16A -65°C ~ 150°C 1.4 V @ 16 A
SDT10A100P5-7

SDT10A100P5-7

SCHOTTKY RECTIFIER PDI5 T&R 1.5K

Diodes Incorporated

2428 0.28
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 10A -55°C ~ 150°C 680 mV @ 10 A
JANTX1N3600/TR

JANTX1N3600/TR

SIGNAL/COMPUTER DIODE

Microchip Technology

2159 4.55
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Tape & Reel (TR) Military, MIL-PRF-19500/231 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole - 4 ns 100 nA @ 50 V 50 V 200mA -65°C ~ 175°C 1 V @ 200 mA
SDT10A100P5-7D

SDT10A100P5-7D

SCHOTTKY RECTIFIER PDI5 T&R 1.5K

Diodes Incorporated

3511 0.28
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 10A -55°C ~ 150°C 680 mV @ 10 A
VS-40EPF12-M3

VS-40EPF12-M3

DIODE GEN PURP 1.2KV 40A TO247AC

Vishay General Semiconductor - Diodes Division

3077 4.56
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VS-40EPF12-M3

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 450 ns 100 µA @ 1200 V 1200 V 40A -40°C ~ 150°C 1.4 V @ 40 A
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