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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
DSR8F600P

DSR8F600P

DIODE GEN PURP 600V 8A TO-220AC

Diodes Incorporated

3553 0.80
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DSR8F600P

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 22pF @ 10V, 1MHz 30 ns 20 µA @ 600 V 600 V 8A 175°C (Max) 3.2 V @ 8 A
S4PK-M3/87A

S4PK-M3/87A

DIODE GEN PURP 800V 4A TO277A

Vishay General Semiconductor - Diodes Division

2619 0.18
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S4PK-M3/87A

Datenblatt

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 2.5 µs 10 µA @ 800 V 800 V 4A -55°C ~ 150°C 1.1 V @ 4 A
STTH2004SG-TR

STTH2004SG-TR

DFD THYR TRIAC & RECTIFIER

STMicroelectronics

2438 0.80
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Tape & Reel (TR) RoHS - - Active - - - - - - - -
S4PM-M3/87A

S4PM-M3/87A

DIODE GEN PURP 1KV 4A TO277A

Vishay General Semiconductor - Diodes Division

2331 0.18
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S4PM-M3/87A

Datenblatt

Tape & Reel (TR) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 2.5 µs 10 µA @ 1000 V 1000 V 4A -55°C ~ 150°C 1.1 V @ 4 A
SFS1605GHMNG

SFS1605GHMNG

DIODE GEN PURP 300V 16A TO263AB

Taiwan Semiconductor Corporation

2341 0.80
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SFS1605GHMNG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 4V, 1MHz 35 ns 10 µA @ 300 V 300 V 16A -55°C ~ 150°C 1.3 V @ 8 A
ACGRBT304-HF

ACGRBT304-HF

DIODE GEN PURP 800V 3A DO214AA

Comchip Technology

2713 0.18
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ACGRBT304-HF

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Last Time Buy Surface Mount 23pF @ 4V, 1MHz - 5 µA @ 200 V 800 V 3A -65°C ~ 175°C 1 V @ 3 A
SFS1606GHMNG

SFS1606GHMNG

DIODE GEN PURP 400V 16A TO263AB

Taiwan Semiconductor Corporation

2543 0.80
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SFS1606GHMNG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 16A -55°C ~ 150°C 1.3 V @ 8 A
S3W-HF

S3W-HF

RECTIFIER GEN PURP 1600V 3A SMC

Comchip Technology

2576 0.18
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S3W-HF

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 10 µA @ 1600 V 1600 V 3A -65°C ~ 150°C 1.1 V @ 3 A
MBR1090-E3/4W

MBR1090-E3/4W

DIODE SCHOTTKY 90V 10A TO220AC

Vishay General Semiconductor - Diodes Division

3252 0.80
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MBR1090-E3/4W

Datenblatt

Tube TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 10A -65°C ~ 150°C 800 mV @ 10 A
SURS8210T3G

SURS8210T3G

DIODE GEN PURP 100V 2A SMB

onsemi

2529 0.13
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Tape & Reel (TR),Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Last Time Buy Surface Mount - 30 ns 2 µA @ 50 V 100 V 2A -60°C ~ 175°C 940 mV @ 2 A
VI30100S-M3/4W

VI30100S-M3/4W

DIODE SCHOTTKY 30A 100V TO-262AA

Vishay General Semiconductor - Diodes Division

2891 0.80
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VI30100S-M3/4W

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 1 mA @ 100 V 100 V 30A -40°C ~ 150°C 910 mV @ 30 A
1N4934GPE-E3/54

1N4934GPE-E3/54

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2868 0.18
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1N4934GPE-E3/54

Datenblatt

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 200 ns 5 µA @ 100 V 100 V 1A -65°C ~ 175°C 1.2 V @ 1 A
VS-8ETH06HN3

VS-8ETH06HN3

DIODE GEN PURP 600V 8A TO220AC

Vishay General Semiconductor - Diodes Division

3667 0.80
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VS-8ETH06HN3

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 50 µA @ 600 V 600 V 8A -65°C ~ 175°C 2.4 V @ 8 A
1N4937GPE-E3/54

1N4937GPE-E3/54

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3730 0.18
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1N4937GPE-E3/54

Datenblatt

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 200 ns 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.2 V @ 1 A
LQA03TC600

LQA03TC600

DIODE GEN PURP 600V 3A TO220AC

Power Integrations

3647 0.80
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LQA03TC600

Datenblatt

Tube Qspeed™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 13 ns 20 µA @ 600 V 600 V 3A 150°C (Max) 3.1 V @ 3 A
BA158GPE-E3/54

BA158GPE-E3/54

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3049 0.18
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BA158GPE-E3/54

Datenblatt

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.3 V @ 1 A
QH03TZ600

QH03TZ600

DIODE GEN PURP 600V 3A TO220AC

Power Integrations

2302 0.80
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QH03TZ600

Datenblatt

Tube Qspeed™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 11pF @ 10V, 1MHz 9.8 ns 250 µA @ 600 V 600 V 3A 150°C (Max) 3 V @ 3 A
BA159GPE-E3/54

BA159GPE-E3/54

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

2362 0.18
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BA159GPE-E3/54

Datenblatt

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.3 V @ 1 A
QH03BZ600

QH03BZ600

DIODE GEN PURP 600V 3A TO263AB

Power Integrations

2905 0.80
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QH03BZ600

Datenblatt

Tape & Reel (TR) Qspeed™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 11pF @ 10V, 1MHz 9.8 ns 250 µA @ 600 V 600 V 3A 150°C (Max) 3 V @ 3 A
RGP10BE-E3/54

RGP10BE-E3/54

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3437 0.18
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RGP10BE-E3/54

Datenblatt

Tape & Reel (TR) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1A -65°C ~ 175°C 1.3 V @ 1 A
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