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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
EK 16V0

EK 16V0

DIODE SCHOTTKY 60V 1.5A AXIAL

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2228 0.26
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EK 16V0

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 1 mA @ 60 V 60 V 1.5A -40°C ~ 150°C 620 mV @ 1.5 A
V2PM6LHM3/I

V2PM6LHM3/I

SCHOTTKY RECTIFIER 2A 60V SMP

Vishay General Semiconductor - Diodes Division

3759 0.09
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V2PM6LHM3/I

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 250pF @ 4V, 1MHz - 200 µA @ 60 V 60 V 2A (DC) -40°C ~ 175°C 630 mV @ 2 A
EK 19V0

EK 19V0

DIODE SCHOTTKY 90V 1.5A AXIAL

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2112 0.26
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EK 19V0

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 2 mA @ 90 V 90 V 1.5A -40°C ~ 150°C 810 mV @ 1.5 A
V2PL45LHM3/I

V2PL45LHM3/I

SCHOTTKY RECTIFIER 2A 45V SMP

Vishay General Semiconductor - Diodes Division

3280 0.09
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V2PL45LHM3/I

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Tape & Reel (TR) Automotive, AEC-Q101, eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 390pF @ 4V, 1MHz - 300 µA @ 45 V 45 V 2A (DC) -40°C ~ 150°C 530 mV @ 2 A
EM 1AV0

EM 1AV0

DIODE GEN PURP 600V 1A AXIAL

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2065 0.26
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EM 1AV0

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 600 V 600 V 1A -40°C ~ 150°C 970 mV @ 1 A
V2P6LHM3/I

V2P6LHM3/I

SCHOTTKY RECTIFIER 2A 60V SMP

Vishay General Semiconductor - Diodes Division

2486 0.09
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V2P6LHM3/I

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Tape & Reel (TR) Automotive, AEC-Q101, eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 255pF @ 4V, 1MHz - 480 µA @ 60 V 60 V 2A (DC) -40°C ~ 150°C 600 mV @ 2 A
EM 1AW

EM 1AW

DIODE GEN PURP 600V 1A AXIAL

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2233 0.26
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EM 1AW

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 600 V 600 V 1A -40°C ~ 150°C 970 mV @ 1 A
S1PBHM3/84A

S1PBHM3/84A

DIODE GEN PURP 100V 1A DO220AA

Vishay General Semiconductor - Diodes Division

3706 0.09
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S1PBHM3/84A

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 6pF @ 4V, 1MHz 1.8 µs 1 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.1 V @ 1 A
EM 1YV0

EM 1YV0

DIODE GEN PURP 100V 1A AXIAL

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3833 0.26
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EM 1YV0

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 100 V 100 V 1A -40°C ~ 150°C 970 mV @ 1 A
S1PDHM3/84A

S1PDHM3/84A

DIODE GEN PURP 200V 1A DO220AA

Vishay General Semiconductor - Diodes Division

2046 0.09
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S1PDHM3/84A

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 6pF @ 4V, 1MHz 1.8 µs 1 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.1 V @ 1 A
EM 1YV1

EM 1YV1

DIODE GEN PURP 100V 1A AXIAL

Sanken

2732 0.26
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EM 1YV1

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 100 V 100 V 1A -40°C ~ 150°C 970 mV @ 1 A
S1PMHM3/84A

S1PMHM3/84A

DIODE GEN PURP 1KV 1A DO220AA

Vishay General Semiconductor - Diodes Division

3524 0.09
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S1PMHM3/84A

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 6pF @ 4V, 1MHz 1.8 µs 1 µA @ 1000 V 1000 V 1A -55°C ~ 150°C 1.1 V @ 1 A
EM01ZV0

EM01ZV0

DIODE GEN PURP 200V 1A AXIAL

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3421 0.26
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EM01ZV0

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 200 V 200 V 1A -40°C ~ 150°C 970 mV @ 1 A
SFT14G R0G

SFT14G R0G

DIODE GEN PURP 200V 1A TS-1

Taiwan Semiconductor Corporation

2534 0.09
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SFT14G R0G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 20pF @ 4V, 1MHz 35 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 950 mV @ 1 A
EM01ZW

EM01ZW

DIODE GEN PURP 200V 1A AXIAL

Sanken

2406 0.26
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EM01ZW

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 200 V 200 V 1A -40°C ~ 150°C 970 mV @ 1 A
UG06A R0G

UG06A R0G

DIODE GEN PURP 50V 600MA TS-1

Taiwan Semiconductor Corporation

2427 0.09
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UG06A R0G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 9pF @ 4V, 1MHz 15 ns 5 µA @ 50 V 50 V 600mA -55°C ~ 150°C 950 mV @ 600 mA
EP01CV0

EP01CV0

DIODE GEN PURP 1KV 200MA AXIAL

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2920 0.26
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EP01CV0

Datenblatt

Tape & Box (TB) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole - 200 ns 5 µA @ 1000 V 1000 V 200mA -40°C ~ 150°C 4 V @ 200 mA
UG06B R0G

UG06B R0G

DIODE GEN PURP 100V 600MA TS-1

Taiwan Semiconductor Corporation

3318 0.09
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UG06B R0G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 9pF @ 4V, 1MHz 15 ns 5 µA @ 100 V 100 V 600mA -55°C ~ 150°C 950 mV @ 600 mA
EP01CW

EP01CW

DIODE GEN PURP 1KV 200MA AXIAL

Sanken

3828 0.26
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EP01CW

Datenblatt

Tape & Box (TB) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole - 200 ns 5 µA @ 1000 V 1000 V 200mA -40°C ~ 150°C 4 V @ 200 mA
UG06C R0G

UG06C R0G

DIODE GEN PURP 150V 600MA TS-1

Taiwan Semiconductor Corporation

3188 0.09
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UG06C R0G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 9pF @ 4V, 1MHz 15 ns 5 µA @ 150 V 150 V 600mA -55°C ~ 150°C 950 mV @ 600 mA
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