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Photos Le fabricant# Stocks Prix Quantité Tableau Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType
B500C5000A

B500C5000A

1PH BRIDGE 30X20X3.6 1000V 5A

Diotec Semiconductor

3323 1.74
- +

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B500C5000A

Datenblatt

Box - Active Single Phase Standard 1 kV 4 A 1 V @ 5 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole
NTE53000

NTE53000

BRIDGE-200VRM 10A

NTE Electronics, Inc

828 1.80
- +

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NTE53000

Datenblatt

Bag - Active Single Phase Standard 200 V 10 A 1.1 V @ 5 A 10 µA @ 200 V -65°C ~ 125°C (TJ) -
B500C7000A

B500C7000A

1PH BRIDGE 30X20X3.6 1000V 7A

Diotec Semiconductor

3086 1.82
- +

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B500C7000A

Datenblatt

Box - Active Single Phase Standard 1 kV 4.8 A 1 V @ 5 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole
GBJ2006-BP

GBJ2006-BP

BRIDGE RECT 1PHASE 600V 20A GBJ

Micro Commercial Co

3461 1.83
- +

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GBJ2006-BP

Datenblatt

Bulk - Active Single Phase Standard 600 V 20 A 1.05 V @ 10 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole
NTE5305

NTE5305

R-SI BRG 600V 1.5A

NTE Electronics, Inc

2047 1.87
- +

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NTE5305

Datenblatt

Bag - Active Single Phase Standard 600 V 1.5 A 1 V @ 1 A 10 µA @ 600 V -55°C ~ 125°C (TJ) Through Hole
NTE169

NTE169

R-SI BRIDGE 600V 2A

NTE Electronics, Inc

3852 1.92
- +

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NTE169

Datenblatt

Bag - Active Single Phase Standard 600 V 2 A 1.1 V @ 2 A 10 µA @ 600 V -55°C ~ 165°C (TJ) Through Hole
TS15P06G

TS15P06G

BRIDGE RECT 1P 800V 15A TS-6P

Taiwan Semiconductor Corporation

3118 1.95
- +

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TS15P06G

Datenblatt

Tube - Active Single Phase Standard 800 V 15 A 1.1 V @ 15 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
DBF10TC

DBF10TC

BRIDGE RECTIFIER, 1 PHASE, 1A, 6

onsemi

2037 1.47
- +

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Bulk - Active - - - - - - - -
NTE53001

NTE53001

BRIDGE-400VRM 10A

NTE Electronics, Inc

685 1.99
- +

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NTE53001

Datenblatt

Bag - Active Single Phase Standard 600 V 8 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) -
TS20P05G

TS20P05G

BRIDGE RECT 1P 600V 20A TS-6P

Taiwan Semiconductor Corporation

2828 2.00
- +

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TS20P05G

Datenblatt

Tube - Active Single Phase Standard 600 V 20 A 1.1 V @ 20 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
TS20P06G

TS20P06G

BRIDGE RECT 1P 800V 20A TS-6P

Taiwan Semiconductor Corporation

2028 2.00
- +

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TS20P06G

Datenblatt

Tube - Active Single Phase Standard 800 V 20 A 1.1 V @ 20 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
GBJ3502-BP

GBJ3502-BP

BRIDGE RECT 1PHASE 200V 35A GBJ

Micro Commercial Co

3657 2.05
- +

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GBJ3502-BP

Datenblatt

Tube - Active Single Phase Standard 200 V 35 A 1.05 V @ 17.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole
GBJ3501-BP

GBJ3501-BP

BRIDGE RECT 1PHASE 100V 35A GBJ

Micro Commercial Co

2200 2.05
- +

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GBJ3501-BP

Datenblatt

Tube - Active Single Phase Standard 100 V 35 A 1.05 V @ 17.5 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole
GBUK8G

GBUK8G

1PH BRIDGE GBU 380V 8A

Diotec Semiconductor

2029 2.12
- +

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GBUK8G

Datenblatt

Box - Active Single Phase Standard 380 V 8 A 900 mV @ 8 A 5 µA @ 380 V -50°C ~ 150°C (TJ) Through Hole
GBUK8D

GBUK8D

1PH BRIDGE GBU 190V 8A

Diotec Semiconductor

3547 2.12
- +

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GBUK8D

Datenblatt

Box - Active Single Phase Standard 190 V 8 A 900 mV @ 8 A 5 µA @ 190 V -50°C ~ 150°C (TJ) Through Hole
KBL406G

KBL406G

BRIDGE RECT 1PHASE 800V 4A KBL

Taiwan Semiconductor Corporation

3647 2.15
- +

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KBL406G

Datenblatt

Tray - Active Single Phase Standard 800 V 4 A 1.1 V @ 4 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
NTE5306

NTE5306

R-SI BRG 800V 1.5A

NTE Electronics, Inc

556 2.16
- +

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NTE5306

Datenblatt

Bag - Active Single Phase Standard 800 V 1.5 A 1 V @ 1 A 10 µA @ 800 V -55°C ~ 125°C (TJ) Through Hole
NTE53002

NTE53002

BRIDGE-600VRM 10A

NTE Electronics, Inc

3592 2.18
- +

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NTE53002

Datenblatt

Bag - Active Single Phase Standard 600 V 10 A 1.1 V @ 5 A 10 µA @ 600 V -65°C ~ 125°C (TJ) -
NTE5304

NTE5304

R-SI BRG 400V 1.5A

NTE Electronics, Inc

3022 1.73
- +

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NTE5304

Datenblatt

Bag - Active Single Phase Standard 400 V 1.5 A 1 V @ 1 A 10 µA @ 400 V -55°C ~ 125°C (TJ) Through Hole
DBF150G

DBF150G

15 A SILICON DIFFUSED JUNCTION T

Sanyo

2331 1.80
- +

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DBF150G

Datenblatt

Bulk - Active Single Phase Standard 600 V 3.2 A 1.1 V @ 7.5 A 10 µA @ 600 V 150°C (TJ) Through Hole
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